Cause of the 5.0 ev absorption band in pure silica glass

Ryoichi Tohmon, Yoshiya Yamasaka, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    The optical absorption band at 5.0 eV (the 'B2 band') is classified into two types (B2α: and B2β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B2α band. The 7.6 eV and the B2α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.

    Original languageEnglish
    Pages (from-to)671-678
    Number of pages8
    JournalJournal of Non-Crystalline Solids
    Volume95-96
    Issue numberPART 2
    DOIs
    Publication statusPublished - 1987 Dec 1

    Fingerprint

    silica glass
    Fused silica
    Absorption spectra
    absorption spectra
    causes
    Oxygen vacancies
    Light absorption
    Photoluminescence
    Heat treatment
    optical absorption
    heat treatment
    photoluminescence
    oxygen

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Electronic, Optical and Magnetic Materials

    Cite this

    Cause of the 5.0 ev absorption band in pure silica glass. / Tohmon, Ryoichi; Yamasaka, Yoshiya; Nagasawa, Kaya; Ohki, Yoshimichi; Hama, Yoshimasa.

    In: Journal of Non-Crystalline Solids, Vol. 95-96, No. PART 2, 01.12.1987, p. 671-678.

    Research output: Contribution to journalArticle

    Tohmon, Ryoichi ; Yamasaka, Yoshiya ; Nagasawa, Kaya ; Ohki, Yoshimichi ; Hama, Yoshimasa. / Cause of the 5.0 ev absorption band in pure silica glass. In: Journal of Non-Crystalline Solids. 1987 ; Vol. 95-96, No. PART 2. pp. 671-678.
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