Cause of the appearance of oxygen vacancies in yttria-stabilized zirconia and its relation to 2.8 eV photoluminescence

Shoji Kaneko, Takaaki Morimoto, Yoshimichi Ohki

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    Abstract

    When we implanted P<sup>+</sup> or B<sup>+</sup> ions into yttria-stabilized zirconia (YSZ), its crystallinity was degraded. Concurrently, the photoluminescence at around 2.8 eV originating from two types of oxygen vacancies with one or two captured electrons became weak, indicating a decrease in the number of oxygen vacancies. Oxygen vacancies appear in YSZ as a result of the replacement of Zr<sup>4+</sup> by Y<sup>3+</sup> in ZrO<inf>2</inf>. Therefore, it seems that the separation of YSZ into ZrO<inf>2</inf> and Y<inf>2</inf>O<inf>3</inf> induced by the ion implantation is responsible for the decrease in the number of oxygen vacancies. Moreover, the intensity of the 2.8 eV photoluminescence returns to the value before the ion implantation if the sample is annealed thermally after the implantation at temperatures higher than the crystallization temperature of YSZ. The reaction opposite to the above seems to be induced by the thermal annealing.

    Original languageEnglish
    Article number06GC03
    JournalJapanese Journal of Applied Physics
    Volume54
    Issue number6
    DOIs
    Publication statusPublished - 2015 Jun 1

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    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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