CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

G. F. Lorusso, N. Collaert, R. Rooyackers, M. Ercken, I. Pollentier, S. Cheng, B. Degroote, M. Jurczak, S. Biesemans, O. Richard, H. Bender, A. Azordegan, R. Kuppa, S. Shirke, J. Prochazka, Timothy Edward Long

Research output: Contribution to journalConference article

Abstract

We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.

Original languageEnglish
Article numberPE223
Pages (from-to)169-172
Number of pages4
JournalIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
Publication statusPublished - 2005 Dec 15
Externally publishedYes
EventIEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, United States
Duration: 2005 Sep 132005 Sep 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices'. Together they form a unique fingerprint.

  • Cite this

    Lorusso, G. F., Collaert, N., Rooyackers, R., Ercken, M., Pollentier, I., Cheng, S., Degroote, B., Jurczak, M., Biesemans, S., Richard, O., Bender, H., Azordegan, A., Kuppa, R., Shirke, S., Prochazka, J., & Long, T. E. (2005). CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 169-172. [PE223].