CdTe and CdZnTe detectors for timing measurements

Yuu Okada, Tadayuki Takahashi, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Kunishiro Mori, Kazuo Makishima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    We report the timing properties of CdTe and CdZnTe detectors in planar configuration. By utilizing 241Am doped scintilator, we have developed a new method to evaluate the timing performance of the semiconductor detector. We confirm that the slow mobility and short life time of holes significantly degrades the timing performance. To achieve high carrier speed, either by applying a high electric field or by selecting only electrons, is very important for obtaining a detector with fast, ∼ nsec timing capability. To select only the electron events, we adopt the pulse height selection with a fast-slow shaping amplifier. In conjunction with a newly developed CdTe diode, we obtain a superior performance of 5.8 nsec. We also discuss the application for Positron Emission Tomography with 511 keV gamma-gamma coincidence method, and found that a geometrical arrangement in which electrodes are parallel to the incident γ-rays gives about 3 time better timing response than is available when the electrodes are perpendicular to the γ-ray beam.

    Original languageEnglish
    Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
    Pages2429-2433
    Number of pages5
    Volume4
    Publication statusPublished - 2002
    Event2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA
    Duration: 2001 Nov 42001 Nov 10

    Other

    Other2001 IEEE Nuclear Science Symposium Conference Record
    CitySan Diego, CA
    Period01/11/401/11/10

    Fingerprint

    Detectors
    Semiconductor detectors
    Electrodes
    Positron emission tomography
    Electrons
    Diodes
    Electric fields

    Keywords

    • CdTe
    • CdZnTe
    • Timing

    ASJC Scopus subject areas

    • Computer Vision and Pattern Recognition
    • Industrial and Manufacturing Engineering

    Cite this

    Okada, Y., Takahashi, T., Sato, G., Watanabe, S., Nakazawa, K., Mori, K., & Makishima, K. (2002). CdTe and CdZnTe detectors for timing measurements. In IEEE Nuclear Science Symposium and Medical Imaging Conference (Vol. 4, pp. 2429-2433)

    CdTe and CdZnTe detectors for timing measurements. / Okada, Yuu; Takahashi, Tadayuki; Sato, Goro; Watanabe, Shin; Nakazawa, Kazuhiro; Mori, Kunishiro; Makishima, Kazuo.

    IEEE Nuclear Science Symposium and Medical Imaging Conference. Vol. 4 2002. p. 2429-2433.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Okada, Y, Takahashi, T, Sato, G, Watanabe, S, Nakazawa, K, Mori, K & Makishima, K 2002, CdTe and CdZnTe detectors for timing measurements. in IEEE Nuclear Science Symposium and Medical Imaging Conference. vol. 4, pp. 2429-2433, 2001 IEEE Nuclear Science Symposium Conference Record, San Diego, CA, 01/11/4.
    Okada Y, Takahashi T, Sato G, Watanabe S, Nakazawa K, Mori K et al. CdTe and CdZnTe detectors for timing measurements. In IEEE Nuclear Science Symposium and Medical Imaging Conference. Vol. 4. 2002. p. 2429-2433
    Okada, Yuu ; Takahashi, Tadayuki ; Sato, Goro ; Watanabe, Shin ; Nakazawa, Kazuhiro ; Mori, Kunishiro ; Makishima, Kazuo. / CdTe and CdZnTe detectors for timing measurements. IEEE Nuclear Science Symposium and Medical Imaging Conference. Vol. 4 2002. pp. 2429-2433
    @inproceedings{cfc04ac25e3840e496fe7664b36f33fa,
    title = "CdTe and CdZnTe detectors for timing measurements",
    abstract = "We report the timing properties of CdTe and CdZnTe detectors in planar configuration. By utilizing 241Am doped scintilator, we have developed a new method to evaluate the timing performance of the semiconductor detector. We confirm that the slow mobility and short life time of holes significantly degrades the timing performance. To achieve high carrier speed, either by applying a high electric field or by selecting only electrons, is very important for obtaining a detector with fast, ∼ nsec timing capability. To select only the electron events, we adopt the pulse height selection with a fast-slow shaping amplifier. In conjunction with a newly developed CdTe diode, we obtain a superior performance of 5.8 nsec. We also discuss the application for Positron Emission Tomography with 511 keV gamma-gamma coincidence method, and found that a geometrical arrangement in which electrodes are parallel to the incident γ-rays gives about 3 time better timing response than is available when the electrodes are perpendicular to the γ-ray beam.",
    keywords = "CdTe, CdZnTe, Timing",
    author = "Yuu Okada and Tadayuki Takahashi and Goro Sato and Shin Watanabe and Kazuhiro Nakazawa and Kunishiro Mori and Kazuo Makishima",
    year = "2002",
    language = "English",
    volume = "4",
    pages = "2429--2433",
    booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

    }

    TY - GEN

    T1 - CdTe and CdZnTe detectors for timing measurements

    AU - Okada, Yuu

    AU - Takahashi, Tadayuki

    AU - Sato, Goro

    AU - Watanabe, Shin

    AU - Nakazawa, Kazuhiro

    AU - Mori, Kunishiro

    AU - Makishima, Kazuo

    PY - 2002

    Y1 - 2002

    N2 - We report the timing properties of CdTe and CdZnTe detectors in planar configuration. By utilizing 241Am doped scintilator, we have developed a new method to evaluate the timing performance of the semiconductor detector. We confirm that the slow mobility and short life time of holes significantly degrades the timing performance. To achieve high carrier speed, either by applying a high electric field or by selecting only electrons, is very important for obtaining a detector with fast, ∼ nsec timing capability. To select only the electron events, we adopt the pulse height selection with a fast-slow shaping amplifier. In conjunction with a newly developed CdTe diode, we obtain a superior performance of 5.8 nsec. We also discuss the application for Positron Emission Tomography with 511 keV gamma-gamma coincidence method, and found that a geometrical arrangement in which electrodes are parallel to the incident γ-rays gives about 3 time better timing response than is available when the electrodes are perpendicular to the γ-ray beam.

    AB - We report the timing properties of CdTe and CdZnTe detectors in planar configuration. By utilizing 241Am doped scintilator, we have developed a new method to evaluate the timing performance of the semiconductor detector. We confirm that the slow mobility and short life time of holes significantly degrades the timing performance. To achieve high carrier speed, either by applying a high electric field or by selecting only electrons, is very important for obtaining a detector with fast, ∼ nsec timing capability. To select only the electron events, we adopt the pulse height selection with a fast-slow shaping amplifier. In conjunction with a newly developed CdTe diode, we obtain a superior performance of 5.8 nsec. We also discuss the application for Positron Emission Tomography with 511 keV gamma-gamma coincidence method, and found that a geometrical arrangement in which electrodes are parallel to the incident γ-rays gives about 3 time better timing response than is available when the electrodes are perpendicular to the γ-ray beam.

    KW - CdTe

    KW - CdZnTe

    KW - Timing

    UR - http://www.scopus.com/inward/record.url?scp=0035555033&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0035555033&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0035555033

    VL - 4

    SP - 2429

    EP - 2433

    BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

    ER -