Abstract
We describe a stacked detector made of thin cadmium telluride (CdTe) diode detectors. By using a thin CdTe device, we can overcome the charge loss problem due to the small mobility and short lifetime of holes in CdTe or cadmium zinc telluride (CdZnTe) detectors. However, a CdTe detector with a thickness of more than 5 mm is needed for adequate detection efficiency for gamma-rays of several hundred keV. Good energy resolution and good peak detection efficiency are difficult to obtain using such a thick CdTe detector. The stacked detector enabled us to realize a detector with both high-energy resolution and good efficiencies for gamma rays up to several hundred keV. In order to verify this concept, we constructed a prototype made of ten layers of a 0.5-mm-thick CdTe diode detectors with a surface area of 21.5 mm × 21.5 mm. With this, we have achieved 5.3-keV and 7.9-keV energy resolution [full width at half maximum (FWHM)] at 356 keV and 662 keV, respectively, at the temperature of -20°C.
| Original language | English |
|---|---|
| Pages (from-to) | 1292-1296 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 49 II |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2002 Jun |
Keywords
- Cadmium telluride (CdTe)
- Cadmium zinc telluride (CdZnTe)
- CdTe diode detector
- Stacked detector
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering