Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Takefumi Kamioka, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari, Takanobu Watanabe

    Research output: Contribution to journalArticle

    Abstract

    We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.

    Original languageEnglish
    Pages (from-to)1418-1422
    Number of pages5
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume9
    Issue number6
    DOIs
    Publication statusPublished - 2012 Jun

    Fingerprint

    ion irradiation
    hydrogenation
    scanning tunneling microscopy
    activation
    liquid metals
    ion sources
    passivity
    metal ions
    ions
    vacuum
    hydrogen

    Keywords

    • Dopant activation
    • Ion implantation
    • Point defects
    • Scanning tunnelling microscopy
    • Surface modification

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Challenge for STM observation of dopant activation process on Si(001) : In-situ ion irradiation and hydrogenation. / Kamioka, Takefumi; Isono, Fumiya; Yoshida, Takahiro; Ohdomari, Iwao; Watanabe, Takanobu.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 6, 06.2012, p. 1418-1422.

    Research output: Contribution to journalArticle

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