Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Takefumi Kamioka, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari, Takanobu Watanabe

Research output: Contribution to journalArticle

Abstract

We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.

Original languageEnglish
Pages (from-to)1418-1422
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

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Keywords

  • Dopant activation
  • Ion implantation
  • Point defects
  • Scanning tunnelling microscopy
  • Surface modification

ASJC Scopus subject areas

  • Condensed Matter Physics

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