Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Muhaimin Haziq, Shaili Falina*, Asrulnizam Abd Manaf*, Hiroshi Kawarada, Mohd Syamsul*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

Abstract

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device’s performance are addressed.

Original languageEnglish
Article number2133
JournalMicromachines
Volume13
Issue number12
DOIs
Publication statusPublished - 2022 Dec

Keywords

  • 2DEG
  • challenges
  • GaN
  • HEMTs
  • opportunities

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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