Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3

F. Inaba, T. Arima, T. Ishikawa, T. Katsufuji, Y. Tokura

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation =0+AT1.5 over a wide temperature range (2200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.

Original languageEnglish
Pages (from-to)R2221-R2224
JournalPhysical Review B
Volume52
Issue number4
DOIs
Publication statusPublished - 1995 Jan 1

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this