Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3

F. Inaba, T. Arima, T. Ishikawa, Takuro Katsufuji, Y. Tokura

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation =0+AT1.5 over a wide temperature range (2200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.

Original languageEnglish
JournalPhysical Review B
Volume52
Issue number4
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Metal insulator transition
Phase boundaries
Electronic properties
transition metals
Doping (additives)
insulators
Spin fluctuations
electronics
Charge transfer
Magnetic properties
Electric properties
Optical properties
Temperature
optical spectrum
electrical properties
magnetic properties
optical properties
temperature dependence
electrical resistivity
coefficients

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3. / Inaba, F.; Arima, T.; Ishikawa, T.; Katsufuji, Takuro; Tokura, Y.

In: Physical Review B, Vol. 52, No. 4, 1995.

Research output: Contribution to journalArticle

@article{d3b6b3813c1a47718d0c321f648721e8,
title = "Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3",
abstract = "Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation =0+AT1.5 over a wide temperature range (2200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.",
author = "F. Inaba and T. Arima and T. Ishikawa and Takuro Katsufuji and Y. Tokura",
year = "1995",
doi = "10.1103/PhysRevB.52.R2221",
language = "English",
volume = "52",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3

AU - Inaba, F.

AU - Arima, T.

AU - Ishikawa, T.

AU - Katsufuji, Takuro

AU - Tokura, Y.

PY - 1995

Y1 - 1995

N2 - Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation =0+AT1.5 over a wide temperature range (2200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.

AB - Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation =0+AT1.5 over a wide temperature range (2200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.

UR - http://www.scopus.com/inward/record.url?scp=0001563007&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001563007&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.52.R2221

DO - 10.1103/PhysRevB.52.R2221

M3 - Article

AN - SCOPUS:0001563007

VL - 52

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 4

ER -