Change of electronic structures with hole doping in strongly correlated electron systems: titanium oxides

Y. Tokura, Y. Taguchi, Y. Okada, Takuro Katsufuji, T. Arima, K. Kumagai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Crossover behavior of electronic structures from Mott insulator to Pauli metal has been investigated as a function of filling in titanium oxide compounds with perovskite-like structures. The role of the electron correlation manifests itself in filling-dependent enhancement of the density of states at the Fermi level, carrier scattering rate and spin susceptibility on the verge of the metal-insulator transition.

Original languageEnglish
Pages (from-to)992-994
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume186-188
Issue numberC
DOIs
Publication statusPublished - 1993 May 2
Externally publishedYes

Fingerprint

Titanium oxides
titanium oxides
Electronic structure
Doping (additives)
insulators
electronic structure
Electron correlations
Metal insulator transition
Electrons
Fermi level
Perovskite
metals
crossovers
electrons
Metals
Scattering
magnetic permeability
augmentation
scattering
titanium dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Change of electronic structures with hole doping in strongly correlated electron systems : titanium oxides. / Tokura, Y.; Taguchi, Y.; Okada, Y.; Katsufuji, Takuro; Arima, T.; Kumagai, K.

In: Physica B: Physics of Condensed Matter, Vol. 186-188, No. C, 02.05.1993, p. 992-994.

Research output: Contribution to journalArticle

Tokura, Y. ; Taguchi, Y. ; Okada, Y. ; Katsufuji, Takuro ; Arima, T. ; Kumagai, K. / Change of electronic structures with hole doping in strongly correlated electron systems : titanium oxides. In: Physica B: Physics of Condensed Matter. 1993 ; Vol. 186-188, No. C. pp. 992-994.
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