Change of electronic structures with hole doping in strongly correlated electron systems: titanium oxides

Y. Tokura, Y. Taguchi, Y. Okada, T. Katsufuji, T. Arima, K. Kumagai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Crossover behavior of electronic structures from Mott insulator to Pauli metal has been investigated as a function of filling in titanium oxide compounds with perovskite-like structures. The role of the electron correlation manifests itself in filling-dependent enhancement of the density of states at the Fermi level, carrier scattering rate and spin susceptibility on the verge of the metal-insulator transition.

Original languageEnglish
Pages (from-to)992-994
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume186-188
Issue numberC
DOIs
Publication statusPublished - 1993 May 2
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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