Channel Edge Doping (CED) Method for Reducing the Short-Channel Effect

N. Yamauchi, K. Kato, T. Wada

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4 Citations (Scopus)

Abstract

A new fabrication process for short-channel MOSFET's, the channel edge doping method (CED), is proposed. In this method, highly doped regions are self-aligned with the channel edges by using a silicon dioxide liftoff technique. The spread of source/drain depletionregions toward the channel is suppressed by the highly doped regions. Thus the short-channel effect can be prevented. Using the CED method, n-channel MOSFET's with effective channel length down to 0.9 μm are fabricated. Their characteristics are compared with those for conventionally processed MOSFET's and the effect of the CED method for reducing the short-channel effect is confirmed.

Original languageEnglish
Pages (from-to)406-408
Number of pages3
JournalIEEE Electron Device Letters
Volume4
Issue number11
DOIs
Publication statusPublished - 1983 Nov

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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