Channel Edge Doping (CED) Method for Reducing the Short-Channel Effect

Noriyoshi Yamauchi, K. Kato, T. Wada

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new fabrication process for short-channel MOSFET's, the channel edge doping method (CED), is proposed. In this method, highly doped regions are self-aligned with the channel edges by using a silicon dioxide liftoff technique. The spread of source/drain depletionregions toward the channel is suppressed by the highly doped regions. Thus the short-channel effect can be prevented. Using the CED method, n-channel MOSFET's with effective channel length down to 0.9 μm are fabricated. Their characteristics are compared with those for conventionally processed MOSFET's and the effect of the CED method for reducing the short-channel effect is confirmed.

Original languageEnglish
Pages (from-to)406-408
Number of pages3
JournalIEEE Electron Device Letters
Volume4
Issue number11
DOIs
Publication statusPublished - 1983
Externally publishedYes

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Doping (additives)
Silicon Dioxide
Silica
Fabrication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Channel Edge Doping (CED) Method for Reducing the Short-Channel Effect. / Yamauchi, Noriyoshi; Kato, K.; Wada, T.

In: IEEE Electron Device Letters, Vol. 4, No. 11, 1983, p. 406-408.

Research output: Contribution to journalArticle

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