TY - JOUR
T1 - Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation
AU - Furukawa, A.
AU - Abe, Y.
AU - Shimizu, S.
AU - Kuroi, T.
AU - Tokuda, Y.
AU - Inuishi, M.
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 1996
Y1 - 1996
N2 - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
AB - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
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M3 - Conference article
AN - SCOPUS:0029715130
SP - 62
EP - 63
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
T2 - Proceedings of the 1996 Symposium on VLSI Technology
Y2 - 11 June 1996 through 13 June 1996
ER -