Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa, Y. Abe, S. Shimizu, T. Kuroi, Y. Tokuda, Masahide Inuishi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

Original languageEnglish
Pages (from-to)62-63
Number of pages2
JournalUnknown Journal
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Nitridation
Hot carriers
Threshold voltage
Ion implantation
low voltage
implantation
field effect transistors
engineering
Nitrogen
nitrogen
Degradation
Oxides
Electric potential
threshold voltage
spacers
retarding
degradation
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation. / Furukawa, A.; Abe, Y.; Shimizu, S.; Kuroi, T.; Tokuda, Y.; Inuishi, Masahide.

In: Unknown Journal, 1996, p. 62-63.

Research output: Contribution to journalArticle

@article{1dc96b0d75c04f3ca8bc6d416480705c,
title = "Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation",
abstract = "Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.",
author = "A. Furukawa and Y. Abe and S. Shimizu and T. Kuroi and Y. Tokuda and Masahide Inuishi",
year = "1996",
language = "English",
pages = "62--63",
journal = "Nuclear Physics A",
issn = "0375-9474",
publisher = "Elsevier",

}

TY - JOUR

T1 - Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

AU - Furukawa, A.

AU - Abe, Y.

AU - Shimizu, S.

AU - Kuroi, T.

AU - Tokuda, Y.

AU - Inuishi, Masahide

PY - 1996

Y1 - 1996

N2 - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

AB - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

UR - http://www.scopus.com/inward/record.url?scp=0029715130&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029715130&partnerID=8YFLogxK

M3 - Article

SP - 62

EP - 63

JO - Nuclear Physics A

JF - Nuclear Physics A

SN - 0375-9474

ER -