Abstract
Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
| Original language | English |
|---|---|
| Pages (from-to) | 62-63 |
| Number of pages | 2 |
| Journal | Unknown Journal |
| Publication status | Published - 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation. / Furukawa, A.; Abe, Y.; Shimizu, S.; Kuroi, T.; Tokuda, Y.; Inuishi, Masahide.
In: Unknown Journal, 1996, p. 62-63.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation
AU - Furukawa, A.
AU - Abe, Y.
AU - Shimizu, S.
AU - Kuroi, T.
AU - Tokuda, Y.
AU - Inuishi, Masahide
PY - 1996
Y1 - 1996
N2 - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
AB - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
UR - http://www.scopus.com/inward/record.url?scp=0029715130&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029715130&partnerID=8YFLogxK
M3 - Article
SP - 62
EP - 63
JO - Nuclear Physics A
JF - Nuclear Physics A
SN - 0375-9474
ER -