Abstract
Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.
| Original language | English |
|---|---|
| Pages (from-to) | 62-63 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - Symposium on VLSI Technology |
| Publication status | Published - 1996 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1996 Jun 11 → 1996 Jun 13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Furukawa, A., Abe, Y., Shimizu, S., Kuroi, T., Tokuda, Y., & Inuishi, M. (1996). Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation. Digest of Technical Papers - Symposium on VLSI Technology, 62-63.