Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa; Y. Abe; S. Shimizu; T. Kuroi; Y. Tokuda; M. Inuishi

Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa^*, Y. Abe, S. Shimizu, T. Kuroi, Y. Tokuda, M. Inuishi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

Original language	English
Pages (from-to)	62-63
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1996 Jun 11 → 1996 Jun 13

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation",

abstract = "Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.",

author = "A. Furukawa and Y. Abe and S. Shimizu and T. Kuroi and Y. Tokuda and M. Inuishi",

year = "1996",

language = "English",

pages = "62--63",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 Symposium on VLSI Technology ; Conference date: 11-06-1996 Through 13-06-1996",

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TY - JOUR

T1 - Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

AU - Furukawa, A.

AU - Abe, Y.

AU - Shimizu, S.

AU - Kuroi, T.

AU - Tokuda, Y.

AU - Inuishi, M.

PY - 1996

Y1 - 1996

N2 - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

AB - Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

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M3 - Conference article

AN - SCOPUS:0029715130

SP - 62

EP - 63

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - Proceedings of the 1996 Symposium on VLSI Technology

Y2 - 11 June 1996 through 13 June 1996

ER -

Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

Abstract

ASJC Scopus subject areas

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