Channel engineering in sub-quarter-micron MOSFETs using nitrogen implantation for low voltage operation

A. Furukawa, Y. Abe, S. Shimizu, T. Kuroi, Y. Tokuda, M. Inuishi

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

Considerable reduction in the threshold voltage for sub-quarter-micron NMOSFETs can be achieved along with suppression of the short channel effects by only adding nitrogen implantation into the channel region. Moreover this simple process can improve hot carrier degradation. The superior performance is based on the effective acceptor concentration drop at the surface of the channel region as well as the light nitridation of the gate oxide and the side-wall spacer.

Original languageEnglish
Pages (from-to)62-63
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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