Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement

K. Hirama, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    In this work, the channel mobility (μch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance-voltage (C-V) measurement, and the gate-to-channel capacitance (CGC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 1014cm- 3). In a 60-μm gate-length diamond MOSFET, a μch of 145cm2/Vs was obtained, which is comparable to that of a SiC inversion layer.

    Original languageEnglish
    Pages (from-to)1256-1258
    Number of pages3
    JournalDiamond and Related Materials
    Volume17
    Issue number7-10
    DOIs
    Publication statusPublished - 2008 Jul

    Fingerprint

    Gates (transistor)
    Diamond
    Capacitance measurement
    MOSFET devices
    metal oxide semiconductors
    Diamonds
    field effect transistors
    capacitance
    diamonds
    evaluation
    Capacitance
    Inversion layers
    Boron
    Voltage measurement
    Diamond films
    Field effect transistors
    diamond films
    electrical measurement
    boron
    inversions

    Keywords

    • C-V measurement
    • Diamond
    • Mobility
    • MOSFET

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement. / Hirama, K.; Takayanagi, H.; Yamauchi, S.; Yang, J. H.; Umezawa, H.; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 17, No. 7-10, 07.2008, p. 1256-1258.

    Research output: Contribution to journalArticle

    Hirama, K. ; Takayanagi, H. ; Yamauchi, S. ; Yang, J. H. ; Umezawa, H. ; Kawarada, Hiroshi. / Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement. In: Diamond and Related Materials. 2008 ; Vol. 17, No. 7-10. pp. 1256-1258.
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    AU - Takayanagi, H.

    AU - Yamauchi, S.

    AU - Yang, J. H.

    AU - Umezawa, H.

    AU - Kawarada, Hiroshi

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