Chaotic behavior in quantum transport devices

S. Harada, N. Kida, T. Morimoto, M. Hemmi, R. Naito, T. Sasaki, N. Aoki, T. Harayama, J. P. Bird, Y. Ochiai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied transport properties in the low-temperature magnetoresistance through the ballistic narrow path restricted by a short width metallic gate on the 2 dimentional electron gas (2DEG) system. An alternate and systematic variation between a Lorentzian line fitting and a cusp-like line fitting in the zero-field peaks has been observed, as sweeping the gate voltage. It indicates a possibility of existence of chaotic and regular paths on the short gated ballistic/tunneling transport. We will discuss on the quantum chaos behavior on the systematic variation between the Lorentzian and the cusp-like peakshape based on the disordered path system under the short gate.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages475-476
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Harada, S., Kida, N., Morimoto, T., Hemmi, M., Naito, R., Sasaki, T., Aoki, N., Harayama, T., Bird, J. P., & Ochiai, Y. (2005). Chaotic behavior in quantum transport devices. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 475-476). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994190