Characteristic red photoluminescence band in oxygen-deficient silica glass

Yuryo Sakurai, Kaya Nagasawa, Hiroyuki Nishikawa, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    34 Citations (Scopus)

    Abstract

    The red photoluminescence (PL) in oxygen deficient-type silica before and after high-dose γ irradiation was investigated as a function of temperature. A 1.8 eV PL band associated with an oxygen-deficient state was induced under a reduced partial oxygen pressure in the fabrication of silica glass by the Ar plasma method. The 1.8 eV PL band can be enhanced by up to 100 times in oxygen deficient-type silica glass by means of high-dose γ irradiation up to 10 MGy.

    Original languageEnglish
    Pages (from-to)370-373
    Number of pages4
    JournalJournal of Applied Physics
    Volume86
    Issue number1
    Publication statusPublished - 1999 Jul

    Fingerprint

    silica glass
    photoluminescence
    oxygen
    dosage
    irradiation
    silicon dioxide
    fabrication
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Characteristic red photoluminescence band in oxygen-deficient silica glass. / Sakurai, Yuryo; Nagasawa, Kaya; Nishikawa, Hiroyuki; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 86, No. 1, 07.1999, p. 370-373.

    Research output: Contribution to journalArticle

    Sakurai, Y, Nagasawa, K, Nishikawa, H & Ohki, Y 1999, 'Characteristic red photoluminescence band in oxygen-deficient silica glass', Journal of Applied Physics, vol. 86, no. 1, pp. 370-373.
    Sakurai, Yuryo ; Nagasawa, Kaya ; Nishikawa, Hiroyuki ; Ohki, Yoshimichi. / Characteristic red photoluminescence band in oxygen-deficient silica glass. In: Journal of Applied Physics. 1999 ; Vol. 86, No. 1. pp. 370-373.
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