Characteristics of CuGaSe2 layers grown on GaAs substrates

Miki Fujita; Atsushi Kawaharazuka; Yoshiji Horikoshi

doi:10.1016/j.jcrysgro.2012.12.171

Characteristics of CuGaSe₂ layers grown on GaAs substrates

Miki Fujita, Atsushi Kawaharazuka, Yoshiji Horikoshi

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

CuGaSe₂ films are grown on GaAs (001) substrates by migration-enhanced epitaxy. Electron probe X-ray micro analysis measurement shows that the CuGaSe₂ films are stoichiometric regardless of the Cu/Ga supply ratio, which indicates that migration-enhanced epitaxy is useful for making stoichio-metric CuGaSe₂ films. Hall effect measurement indicates the p-type conductivity with the hole mobility as high as 2700 cm ²/Vs at low temperatures. The photoluminescence spectrum at 4 K is dominated by the band-edge emission which includes both A-band free and bound exciton emissions. The emission due to donor-acceptor pairs and other deep levels are observed very weakly. Moreover, at temperatures above 180 K, a new emission band appears in the higher energy region of the band-edge emissions. The peak is tentatively attributed to the emission including the B-band free exciton. These results indicate that the optical properties of the CuGaSe ₂ films grown by using migration-enhanced epitaxy are fairly good.

Original language	English
Pages (from-to)	154-157
Number of pages	4
Journal	Journal of Crystal Growth
Volume	378
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.12.171
Publication status	Published - 2013

Keywords

Characterization
Migration enhanced epitaxy
Molecular beam epitaxy
Optical microscopy
Semiconductor ternary compounds
Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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Fujita, M., Kawaharazuka, A., & Horikoshi, Y. (2013). Characteristics of CuGaSe₂ layers grown on GaAs substrates. Journal of Crystal Growth, 378, 154-157. https://doi.org/10.1016/j.jcrysgro.2012.12.171

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title = "Characteristics of CuGaSe2 layers grown on GaAs substrates",

abstract = "CuGaSe2 films are grown on GaAs (001) substrates by migration-enhanced epitaxy. Electron probe X-ray micro analysis measurement shows that the CuGaSe2 films are stoichiometric regardless of the Cu/Ga supply ratio, which indicates that migration-enhanced epitaxy is useful for making stoichio-metric CuGaSe2 films. Hall effect measurement indicates the p-type conductivity with the hole mobility as high as 2700 cm 2/Vs at low temperatures. The photoluminescence spectrum at 4 K is dominated by the band-edge emission which includes both A-band free and bound exciton emissions. The emission due to donor-acceptor pairs and other deep levels are observed very weakly. Moreover, at temperatures above 180 K, a new emission band appears in the higher energy region of the band-edge emissions. The peak is tentatively attributed to the emission including the B-band free exciton. These results indicate that the optical properties of the CuGaSe 2 films grown by using migration-enhanced epitaxy are fairly good.",

keywords = "Characterization, Migration enhanced epitaxy, Molecular beam epitaxy, Optical microscopy, Semiconductor ternary compounds, Solar cells",

author = "Miki Fujita and Atsushi Kawaharazuka and Yoshiji Horikoshi",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.12.171",

language = "English",

volume = "378",

pages = "154--157",

journal = "Journal of Crystal Growth",

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AU - Fujita, Miki

AU - Kawaharazuka, Atsushi

AU - Horikoshi, Yoshiji

PY - 2013

Y1 - 2013

N2 - CuGaSe2 films are grown on GaAs (001) substrates by migration-enhanced epitaxy. Electron probe X-ray micro analysis measurement shows that the CuGaSe2 films are stoichiometric regardless of the Cu/Ga supply ratio, which indicates that migration-enhanced epitaxy is useful for making stoichio-metric CuGaSe2 films. Hall effect measurement indicates the p-type conductivity with the hole mobility as high as 2700 cm 2/Vs at low temperatures. The photoluminescence spectrum at 4 K is dominated by the band-edge emission which includes both A-band free and bound exciton emissions. The emission due to donor-acceptor pairs and other deep levels are observed very weakly. Moreover, at temperatures above 180 K, a new emission band appears in the higher energy region of the band-edge emissions. The peak is tentatively attributed to the emission including the B-band free exciton. These results indicate that the optical properties of the CuGaSe 2 films grown by using migration-enhanced epitaxy are fairly good.

AB - CuGaSe2 films are grown on GaAs (001) substrates by migration-enhanced epitaxy. Electron probe X-ray micro analysis measurement shows that the CuGaSe2 films are stoichiometric regardless of the Cu/Ga supply ratio, which indicates that migration-enhanced epitaxy is useful for making stoichio-metric CuGaSe2 films. Hall effect measurement indicates the p-type conductivity with the hole mobility as high as 2700 cm 2/Vs at low temperatures. The photoluminescence spectrum at 4 K is dominated by the band-edge emission which includes both A-band free and bound exciton emissions. The emission due to donor-acceptor pairs and other deep levels are observed very weakly. Moreover, at temperatures above 180 K, a new emission band appears in the higher energy region of the band-edge emissions. The peak is tentatively attributed to the emission including the B-band free exciton. These results indicate that the optical properties of the CuGaSe 2 films grown by using migration-enhanced epitaxy are fairly good.

KW - Characterization

KW - Migration enhanced epitaxy

KW - Molecular beam epitaxy

KW - Optical microscopy

KW - Semiconductor ternary compounds

KW - Solar cells

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