Abstract
CuGaSe2 films are grown on GaAs (001) substrates by migration-enhanced epitaxy. Electron probe X-ray micro analysis measurement shows that the CuGaSe2 films are stoichiometric regardless of the Cu/Ga supply ratio, which indicates that migration-enhanced epitaxy is useful for making stoichio-metric CuGaSe2 films. Hall effect measurement indicates the p-type conductivity with the hole mobility as high as 2700 cm 2/Vs at low temperatures. The photoluminescence spectrum at 4 K is dominated by the band-edge emission which includes both A-band free and bound exciton emissions. The emission due to donor-acceptor pairs and other deep levels are observed very weakly. Moreover, at temperatures above 180 K, a new emission band appears in the higher energy region of the band-edge emissions. The peak is tentatively attributed to the emission including the B-band free exciton. These results indicate that the optical properties of the CuGaSe 2 films grown by using migration-enhanced epitaxy are fairly good.
Original language | English |
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Pages (from-to) | 154-157 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 378 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Characterization
- Migration enhanced epitaxy
- Molecular beam epitaxy
- Optical microscopy
- Semiconductor ternary compounds
- Solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry