Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

Kouichi Akahane, Toshimasa Umezawa, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).

Original languageEnglish
Article number04EJ16
JournalJapanese journal of applied physics
Volume55
Issue number4
DOIs
Publication statusPublished - 2016 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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