Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

Kouichi Akahane, Toshimasa Umezawa, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

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    1 Citation (Scopus)

    Abstract

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).

    Original languageEnglish
    Article number04EJ16
    JournalJapanese Journal of Applied Physics
    Volume55
    Issue number4
    DOIs
    Publication statusPublished - 2016 Apr 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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