Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

Kouichi Akahane, Toshimasa Umezawa, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

    Research output: Contribution to journalArticle

    Abstract

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).

    Original languageEnglish
    Article number04EJ16
    JournalJapanese Journal of Applied Physics
    Volume55
    Issue number4
    DOIs
    Publication statusPublished - 2016 Apr 1

    Fingerprint

    Quantum dot lasers
    Semiconductor lasers
    semiconductor lasers
    quantum dots
    Substrates
    Ground state
    Semiconductor quantum dots
    lasers
    lasing
    Temperature
    ground state
    room temperature
    temperature
    Compensation and Redress

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate. / Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

    In: Japanese Journal of Applied Physics, Vol. 55, No. 4, 04EJ16, 01.04.2016.

    Research output: Contribution to journalArticle

    Akahane, Kouichi ; Umezawa, Toshimasa ; Matsumoto, Atsushi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate. In: Japanese Journal of Applied Physics. 2016 ; Vol. 55, No. 4.
    @article{20d168467c3d432887050327ba7c4e72,
    title = "Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate",
    abstract = "We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).",
    author = "Kouichi Akahane and Toshimasa Umezawa and Atsushi Matsumoto and Naokatsu Yamamoto and Tetsuya Kawanishi",
    year = "2016",
    month = "4",
    day = "1",
    doi = "10.7567/JJAP.55.04EJ16",
    language = "English",
    volume = "55",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4",

    }

    TY - JOUR

    T1 - Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    AU - Akahane, Kouichi

    AU - Umezawa, Toshimasa

    AU - Matsumoto, Atsushi

    AU - Yamamoto, Naokatsu

    AU - Kawanishi, Tetsuya

    PY - 2016/4/1

    Y1 - 2016/4/1

    N2 - We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).

    AB - We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576nm in the pulsed mode with a high characteristic temperature of 111K at around room temperature (20-80 °C).

    UR - http://www.scopus.com/inward/record.url?scp=84963641774&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84963641774&partnerID=8YFLogxK

    U2 - 10.7567/JJAP.55.04EJ16

    DO - 10.7567/JJAP.55.04EJ16

    M3 - Article

    VL - 55

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4

    M1 - 04EJ16

    ER -