Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.

Original languageEnglish
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages73-74
Number of pages2
DOIs
Publication statusPublished - 2009 Oct 2
Externally publishedYes
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 2009 May 102009 May 14

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period09/5/1009/5/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 73-74). [5012424] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012424