Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages73-74
Number of pages2
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 2009 May 102009 May 14

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period09/5/1009/5/14

Fingerprint

Quantum dot lasers
Semiconductor lasers
Substrates
Semiconductor quantum dots
Temperature
indium arsenide
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 73-74). [5012424] https://doi.org/10.1109/ICIPRM.2009.5012424

Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2009. p. 73-74 5012424.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2009, Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials., 5012424, pp. 73-74, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 09/5/10. https://doi.org/10.1109/ICIPRM.2009.5012424
Akahane K, Yamamoto N, Kawanishi T. Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2009. p. 73-74. 5012424 https://doi.org/10.1109/ICIPRM.2009.5012424
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2009. pp. 73-74
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