Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light

Yoshifumi Takanashi, Kiyoto Takahata, Yoshifumi Muramoto

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

The optical response of InAlAs/InGaAs HEMT's under illumination with modulated light from a 1.3-μm semiconductor laser diode onto the backside of the substrate is measured by using an optical-signal analyzer. It is clear that the response is composed of two signals. One signal is dominant at a low frequency and is due to the photovoltaic effect that causes excess holes photogenerated in the InGaAs channel to accumulate in the source region. This accumulation thus causes a decrease in the threshold voltage of the HEMT's. To explain this mechanism, a theory is given which connects the change in threshold voltage with that in the Fermi energy of the two-dimensional electron gas (2-DEG). The other signal is dominant at a high-frequency and is due to the photoconductive effect in the InGaAs channel beneath the gate. In this case, a large optical gain is produced since electrons at the source region are replenished in the gate channel. This leads to the first clear observation of a photoconductive signal. The bandwidth due to the photovoltaic effect is as low as 45 MHz and is dominated by the lifetime of the excess holes. The bandwidth due to the photoconductive effect is as high as 37 GHz and is dominated by the gain-bandwidth product of transistors rather than the intrinsic transit-time of electrons.

Original languageEnglish
Pages (from-to)2271-2277
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume46
Issue number12
DOIs
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
Photovoltaic effects
Lighting
illumination
Threshold voltage
Bandwidth
photovoltaic effect
Semiconductor lasers
bandwidth
threshold voltage
Optical gain
Two dimensional electron gas
Electrons
signal analyzers
semiconductor lasers
Fermi level
causes
Transistors
transit time

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light. / Takanashi, Yoshifumi; Takahata, Kiyoto; Muramoto, Yoshifumi.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 12, 1999, p. 2271-2277.

Research output: Contribution to journalArticle

@article{789ddddf7aa949a29f38946b76e0882e,
title = "Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light",
abstract = "The optical response of InAlAs/InGaAs HEMT's under illumination with modulated light from a 1.3-μm semiconductor laser diode onto the backside of the substrate is measured by using an optical-signal analyzer. It is clear that the response is composed of two signals. One signal is dominant at a low frequency and is due to the photovoltaic effect that causes excess holes photogenerated in the InGaAs channel to accumulate in the source region. This accumulation thus causes a decrease in the threshold voltage of the HEMT's. To explain this mechanism, a theory is given which connects the change in threshold voltage with that in the Fermi energy of the two-dimensional electron gas (2-DEG). The other signal is dominant at a high-frequency and is due to the photoconductive effect in the InGaAs channel beneath the gate. In this case, a large optical gain is produced since electrons at the source region are replenished in the gate channel. This leads to the first clear observation of a photoconductive signal. The bandwidth due to the photovoltaic effect is as low as 45 MHz and is dominated by the lifetime of the excess holes. The bandwidth due to the photoconductive effect is as high as 37 GHz and is dominated by the gain-bandwidth product of transistors rather than the intrinsic transit-time of electrons.",
author = "Yoshifumi Takanashi and Kiyoto Takahata and Yoshifumi Muramoto",
year = "1999",
doi = "10.1109/16.808049",
language = "English",
volume = "46",
pages = "2271--2277",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light

AU - Takanashi, Yoshifumi

AU - Takahata, Kiyoto

AU - Muramoto, Yoshifumi

PY - 1999

Y1 - 1999

N2 - The optical response of InAlAs/InGaAs HEMT's under illumination with modulated light from a 1.3-μm semiconductor laser diode onto the backside of the substrate is measured by using an optical-signal analyzer. It is clear that the response is composed of two signals. One signal is dominant at a low frequency and is due to the photovoltaic effect that causes excess holes photogenerated in the InGaAs channel to accumulate in the source region. This accumulation thus causes a decrease in the threshold voltage of the HEMT's. To explain this mechanism, a theory is given which connects the change in threshold voltage with that in the Fermi energy of the two-dimensional electron gas (2-DEG). The other signal is dominant at a high-frequency and is due to the photoconductive effect in the InGaAs channel beneath the gate. In this case, a large optical gain is produced since electrons at the source region are replenished in the gate channel. This leads to the first clear observation of a photoconductive signal. The bandwidth due to the photovoltaic effect is as low as 45 MHz and is dominated by the lifetime of the excess holes. The bandwidth due to the photoconductive effect is as high as 37 GHz and is dominated by the gain-bandwidth product of transistors rather than the intrinsic transit-time of electrons.

AB - The optical response of InAlAs/InGaAs HEMT's under illumination with modulated light from a 1.3-μm semiconductor laser diode onto the backside of the substrate is measured by using an optical-signal analyzer. It is clear that the response is composed of two signals. One signal is dominant at a low frequency and is due to the photovoltaic effect that causes excess holes photogenerated in the InGaAs channel to accumulate in the source region. This accumulation thus causes a decrease in the threshold voltage of the HEMT's. To explain this mechanism, a theory is given which connects the change in threshold voltage with that in the Fermi energy of the two-dimensional electron gas (2-DEG). The other signal is dominant at a high-frequency and is due to the photoconductive effect in the InGaAs channel beneath the gate. In this case, a large optical gain is produced since electrons at the source region are replenished in the gate channel. This leads to the first clear observation of a photoconductive signal. The bandwidth due to the photovoltaic effect is as low as 45 MHz and is dominated by the lifetime of the excess holes. The bandwidth due to the photoconductive effect is as high as 37 GHz and is dominated by the gain-bandwidth product of transistors rather than the intrinsic transit-time of electrons.

UR - http://www.scopus.com/inward/record.url?scp=0033331585&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033331585&partnerID=8YFLogxK

U2 - 10.1109/16.808049

DO - 10.1109/16.808049

M3 - Article

AN - SCOPUS:0033331585

VL - 46

SP - 2271

EP - 2277

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -