Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

Yoshifumi Takanashi, Kiyoto Takahata, Yoshifumi Muramoto

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristics of In-AlAs/InGaAs high electron mobility transistor (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.

Original languageEnglish
Pages (from-to)472-474
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number12
DOIs
Publication statusPublished - 1998 Dec
Externally publishedYes

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High electron mobility transistors
Lighting
Photovoltaic effects
Impact ionization
Lasers
Drain current
Piles
Electrodes
Electrons
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination. / Takanashi, Yoshifumi; Takahata, Kiyoto; Muramoto, Yoshifumi.

In: IEEE Electron Device Letters, Vol. 19, No. 12, 12.1998, p. 472-474.

Research output: Contribution to journalArticle

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