Characteristics of narrow-channel polysilicon thin-film transistors

Noriyoshi Yamauchi, J. J J Hajjar, Rafael Reif, Kenji Nakazawa, Keiji Tanaka

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 μm were fabricated and characterized. The most prominent effect of reducing the TFT channel was found to be a drastic decrease in threshold voltage when W was reduced to less than 5 μm. This decrease was found to be correlated with the decrease in grain-boundary trap density.

Original languageEnglish
Pages (from-to)1967-1968
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume38
Issue number8
DOIs
Publication statusPublished - 1991 Aug
Externally publishedYes

Fingerprint

Thin film transistors
Polysilicon
transistors
thin films
Threshold voltage
Grain boundaries
threshold voltage
grain boundaries
traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Characteristics of narrow-channel polysilicon thin-film transistors. / Yamauchi, Noriyoshi; Hajjar, J. J J; Reif, Rafael; Nakazawa, Kenji; Tanaka, Keiji.

In: IEEE Transactions on Electron Devices, Vol. 38, No. 8, 08.1991, p. 1967-1968.

Research output: Contribution to journalArticle

Yamauchi, Noriyoshi ; Hajjar, J. J J ; Reif, Rafael ; Nakazawa, Kenji ; Tanaka, Keiji. / Characteristics of narrow-channel polysilicon thin-film transistors. In: IEEE Transactions on Electron Devices. 1991 ; Vol. 38, No. 8. pp. 1967-1968.
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