Characteristics of Narrow-Channel Polysilicon Thin-Film Transistors

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effect of channel width on the characteristics of polvsilicon thin-film transistors (TFT) was investigated. n-channel TFT’s with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 pm were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5 pm. This decrease was found to be correlated with the decrease in grain-boundary trap density.

Original languageEnglish
Pages (from-to)1967-1968
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume38
Issue number8
DOIs
Publication statusPublished - 1991 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characteristics of Narrow-Channel Polysilicon Thin-Film Transistors'. Together they form a unique fingerprint.

  • Cite this