Characteristics of photoelectrochemical cells with iron oxide/n-Si heterojunction photoanodes

Tetsuya Osaka, Naruya Hirota, Taketoshi Hayashi, Svend Stensig Eskildsen

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Abstract

The iron oxide/n-Si heterojunction electrode was studied as a photoanode for a regenerative photoelectrochemical (PEC) cell. The influence of modifying the top layer of the electrode with Pd or RuO2 was investigated. The photocurrent at the heterojunction electrode was produced by the holes which were photo-excited in both iron oxide and n-Si. The addition of Pd or RuO2 on the heterojunction electrode surface enhanced the optical-to-electrical conversion efficiency. The efficiencies for a stable working PEC cell were found to be 1.34% and 1.60% for a Pd-and a RuO2-modified electrode, respectively. This was measured in a 0.2 M KOH solution containing 0.2 M K4[Fe(CN)6] and 0.01 M K3[Fe(CN)6 at a xenon lamp intensity of 55 mW cm-2. The use of iron oxide made the photoanode highly stable, as compared to an electrode such as RuO2/n-Si. From a constant open-circuit voltage independent of the redox potential in 0.2 M KOH, it was concluded that Fermi level pinning occurs at the interface.

Original languageEnglish
Pages (from-to)1209-1212
Number of pages4
JournalElectrochimica Acta
Volume30
Issue number9
DOIs
Publication statusPublished - 1985

Fingerprint

Photoelectrochemical cells
Iron oxides
Heterojunctions
Electrodes
Xenon
Open circuit voltage
Fermi level
Photocurrents
Electric lamps
Conversion efficiency
ferric oxide

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

Characteristics of photoelectrochemical cells with iron oxide/n-Si heterojunction photoanodes. / Osaka, Tetsuya; Hirota, Naruya; Hayashi, Taketoshi; Eskildsen, Svend Stensig.

In: Electrochimica Acta, Vol. 30, No. 9, 1985, p. 1209-1212.

Research output: Contribution to journalArticle

Osaka, Tetsuya ; Hirota, Naruya ; Hayashi, Taketoshi ; Eskildsen, Svend Stensig. / Characteristics of photoelectrochemical cells with iron oxide/n-Si heterojunction photoanodes. In: Electrochimica Acta. 1985 ; Vol. 30, No. 9. pp. 1209-1212.
@article{7a50d45885ad41708ed907cbb8b692ff,
title = "Characteristics of photoelectrochemical cells with iron oxide/n-Si heterojunction photoanodes",
abstract = "The iron oxide/n-Si heterojunction electrode was studied as a photoanode for a regenerative photoelectrochemical (PEC) cell. The influence of modifying the top layer of the electrode with Pd or RuO2 was investigated. The photocurrent at the heterojunction electrode was produced by the holes which were photo-excited in both iron oxide and n-Si. The addition of Pd or RuO2 on the heterojunction electrode surface enhanced the optical-to-electrical conversion efficiency. The efficiencies for a stable working PEC cell were found to be 1.34{\%} and 1.60{\%} for a Pd-and a RuO2-modified electrode, respectively. This was measured in a 0.2 M KOH solution containing 0.2 M K4[Fe(CN)6] and 0.01 M K3[Fe(CN)6 at a xenon lamp intensity of 55 mW cm-2. The use of iron oxide made the photoanode highly stable, as compared to an electrode such as RuO2/n-Si. From a constant open-circuit voltage independent of the redox potential in 0.2 M KOH, it was concluded that Fermi level pinning occurs at the interface.",
author = "Tetsuya Osaka and Naruya Hirota and Taketoshi Hayashi and Eskildsen, {Svend Stensig}",
year = "1985",
doi = "10.1016/0013-4686(95)80015-8",
language = "English",
volume = "30",
pages = "1209--1212",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Characteristics of photoelectrochemical cells with iron oxide/n-Si heterojunction photoanodes

AU - Osaka, Tetsuya

AU - Hirota, Naruya

AU - Hayashi, Taketoshi

AU - Eskildsen, Svend Stensig

PY - 1985

Y1 - 1985

N2 - The iron oxide/n-Si heterojunction electrode was studied as a photoanode for a regenerative photoelectrochemical (PEC) cell. The influence of modifying the top layer of the electrode with Pd or RuO2 was investigated. The photocurrent at the heterojunction electrode was produced by the holes which were photo-excited in both iron oxide and n-Si. The addition of Pd or RuO2 on the heterojunction electrode surface enhanced the optical-to-electrical conversion efficiency. The efficiencies for a stable working PEC cell were found to be 1.34% and 1.60% for a Pd-and a RuO2-modified electrode, respectively. This was measured in a 0.2 M KOH solution containing 0.2 M K4[Fe(CN)6] and 0.01 M K3[Fe(CN)6 at a xenon lamp intensity of 55 mW cm-2. The use of iron oxide made the photoanode highly stable, as compared to an electrode such as RuO2/n-Si. From a constant open-circuit voltage independent of the redox potential in 0.2 M KOH, it was concluded that Fermi level pinning occurs at the interface.

AB - The iron oxide/n-Si heterojunction electrode was studied as a photoanode for a regenerative photoelectrochemical (PEC) cell. The influence of modifying the top layer of the electrode with Pd or RuO2 was investigated. The photocurrent at the heterojunction electrode was produced by the holes which were photo-excited in both iron oxide and n-Si. The addition of Pd or RuO2 on the heterojunction electrode surface enhanced the optical-to-electrical conversion efficiency. The efficiencies for a stable working PEC cell were found to be 1.34% and 1.60% for a Pd-and a RuO2-modified electrode, respectively. This was measured in a 0.2 M KOH solution containing 0.2 M K4[Fe(CN)6] and 0.01 M K3[Fe(CN)6 at a xenon lamp intensity of 55 mW cm-2. The use of iron oxide made the photoanode highly stable, as compared to an electrode such as RuO2/n-Si. From a constant open-circuit voltage independent of the redox potential in 0.2 M KOH, it was concluded that Fermi level pinning occurs at the interface.

UR - http://www.scopus.com/inward/record.url?scp=3142519767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142519767&partnerID=8YFLogxK

U2 - 10.1016/0013-4686(95)80015-8

DO - 10.1016/0013-4686(95)80015-8

M3 - Article

AN - SCOPUS:3142519767

VL - 30

SP - 1209

EP - 1212

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

IS - 9

ER -