Characterization and analysis of two-dimensional hydrogenated nanocrystalline-diamond metal oxide semiconductor field effect transistor (MOSFET) using different surface charge models with device simulation

A. Reem, A. Mohammed, Quang N. Nguyen, H. Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thanks to the unique properties, nanocrystalline-diamond is a valuable material that is widely used in nano-electronic device fabrication to enable the new promising power device applications in the near future. In general, the hydrogenated-(C-H) nano-diamond metal oxide semiconductor (MOSFET) depicts the normally- on status (depletion mode). In this paper, to confirm normally-on operation and show the characterization of normally-off operations with a controlled gate of the power device and study the corresponding impact, we simulate the two-dimensional (2D) C-H nano-diamond MOSFET under several surface charge models' impact. The enhancement mode, called normally-off, is attained to realize a safety point of the power device. The results also show the shifting tendency of the threshold voltage to a negative value with a positive charge model, given that, in principle, this state is impractical without a donor doping or oxidation layer.

Original languageEnglish
Title of host publicationNANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
PublisherIEEE Computer Society
Pages376-377
Number of pages2
ISBN (Electronic)9781728182643
DOIs
Publication statusPublished - 2020 Jul
Event20th IEEE International Conference on Nanotechnology, NANO 2020 - Virtual, Online, Canada
Duration: 2020 Jul 292020 Jul 31

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2020-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference20th IEEE International Conference on Nanotechnology, NANO 2020
CountryCanada
CityVirtual, Online
Period20/7/2920/7/31

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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