Characterization of a quartz MEMS tilt sensor with 0.001° precision

Jinxing Liang*, Fusao Kohsaka, Xuefeng Li, Ken Kunitomo, Toshitsugu Ueda

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    This paper presents the performance of recently developed MEMS capacitive tilt sensor. The capacitive sensor, which can be considered as a static accelerometer, is fabricated using bulk micromachining technique on a 100-μm-thick z-cut quartz wafer. High-sensitivity and low-noise are achieved with stable output performance in the range of ±1°. The performance evaluation was performed at the 0.625 V excitation voltage and 9.1 Hz data update rate. The typical sensitivity with good linearity is 403.5 fF/°, which corresponds to 23.1 pF/g and the typical RMS noise is 74 aF, which corresponds to 25 aF/√Hz (0.9 μg/√Hz) noise floor. High-precision measurement of 0.001° has been demonstrated.

    Original languageEnglish
    Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
    Pages308-310
    Number of pages3
    DOIs
    Publication statusPublished - 2009
    EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO
    Duration: 2009 Jun 212009 Jun 25

    Other

    OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
    CityDenver, CO
    Period09/6/2109/6/25

    Keywords

    • Capacitive
    • MEMS
    • Quartz
    • Tilt sensor

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

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