Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura, Tsutomu Tezuka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages26-27
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Externally publishedYes
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

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Strain relaxation
Lenses
Strain measurement
Oils

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Usuda, K., Kosemura, D., Tomita, M., Ogura, A., & Tezuka, T. (2012). Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 26-27). [6222440] https://doi.org/10.1109/ISTDM.2012.6222440

Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. / Usuda, Koji; Kosemura, Daisuke; Tomita, Motohiro; Ogura, Atsushi; Tezuka, Tsutomu.

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 26-27 6222440.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Usuda, K, Kosemura, D, Tomita, M, Ogura, A & Tezuka, T 2012, Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222440, pp. 26-27, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222440
Usuda K, Kosemura D, Tomita M, Ogura A, Tezuka T. Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 26-27. 6222440 https://doi.org/10.1109/ISTDM.2012.6222440
Usuda, Koji ; Kosemura, Daisuke ; Tomita, Motohiro ; Ogura, Atsushi ; Tezuka, Tsutomu. / Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 26-27
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