Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura, Tsutomu Tezuka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages26-27
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Externally publishedYes
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Country/TerritoryUnited States
CityBerkeley, CA
Period12/6/412/6/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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