Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa, K. Akahane, A. Kanno, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

Original languageEnglish
Title of host publicationCLEO: Science and Innovations, CLEO_SI 2013
Publication statusPublished - 2013
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

Fingerprint

pamidronate
Photodiodes
multiplication
Semiconductor quantum dots
photodiodes
quantum dots
avalanches
Temperature
temperature dependence
curves
indium arsenide

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In CLEO: Science and Innovations, CLEO_SI 2013

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. / Umezawa, T.; Akahane, K.; Kanno, A.; Kawanishi, Tetsuya.

CLEO: Science and Innovations, CLEO_SI 2013. 2013.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Umezawa, T, Akahane, K, Kanno, A & Kawanishi, T 2013, Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. in CLEO: Science and Innovations, CLEO_SI 2013. CLEO: Science and Innovations, CLEO_SI 2013, San Jose, CA, United States, 13/6/9.
Umezawa T, Akahane K, Kanno A, Kawanishi T. Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In CLEO: Science and Innovations, CLEO_SI 2013. 2013
Umezawa, T. ; Akahane, K. ; Kanno, A. ; Kawanishi, Tetsuya. / Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. CLEO: Science and Innovations, CLEO_SI 2013. 2013.
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