Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa, K. Akahane, A. Kanno, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
Publication statusPublished - 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

Fingerprint

pamidronate
Photodiodes
Semiconductor quantum dots
Temperature
indium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833441] IEEE Computer Society.

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. / Umezawa, T.; Akahane, K.; Kanno, A.; Kawanishi, Tetsuya.

2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society, 2013. 6833441.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Umezawa, T, Akahane, K, Kanno, A & Kawanishi, T 2013, Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. in 2013 Conference on Lasers and Electro-Optics, CLEO 2013., 6833441, IEEE Computer Society, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, San Jose, CA, United States, 13/6/9.
Umezawa T, Akahane K, Kanno A, Kawanishi T. Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society. 2013. 6833441
Umezawa, T. ; Akahane, K. ; Kanno, A. ; Kawanishi, Tetsuya. / Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. 2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society, 2013.
@inproceedings{6a133dfef9e04a1ca6f87e86d6485e2c,
title = "Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer",
abstract = "We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.",
author = "T. Umezawa and K. Akahane and A. Kanno and Tetsuya Kawanishi",
year = "2013",
language = "English",
isbn = "9781557529725",
booktitle = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
publisher = "IEEE Computer Society",

}

TY - GEN

T1 - Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Kawanishi, Tetsuya

PY - 2013

Y1 - 2013

N2 - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

AB - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

UR - http://www.scopus.com/inward/record.url?scp=84903778891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903778891&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84903778891

SN - 9781557529725

BT - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

PB - IEEE Computer Society

ER -