Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer'. Together they form a unique fingerprint.

  • Cite this

    Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833441] (2013 Conference on Lasers and Electro-Optics, CLEO 2013). IEEE Computer Society.