Abstract
We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.
| Original language | English |
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| Title of host publication | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
| Publisher | IEEE Computer Society |
| ISBN (Print) | 9781557529725 |
| Publication status | Published - 2013 Jan 1 |
| Event | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14 |
Publication series
| Name | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
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Other
| Other | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 13/6/9 → 13/6/14 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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Cite this
Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833441] (2013 Conference on Lasers and Electro-Optics, CLEO 2013). IEEE Computer Society.