Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa, K. Akahane, A. Kanno, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
Publication statusPublished - 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 9 → 2013 Jun 14

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period13/6/9 → 13/6/14

Fingerprint

pamidronate
Photodiodes
Semiconductor quantum dots
Temperature
indium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833441] IEEE Computer Society.

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. / Umezawa, T.; Akahane, K.; Kanno, A.; Kawanishi, Tetsuya.

2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society, 2013. 6833441.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Umezawa, T, Akahane, K, Kanno, A & Kawanishi, T 2013, Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. in 2013 Conference on Lasers and Electro-Optics, CLEO 2013., 6833441, IEEE Computer Society, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, San Jose, CA, United States, 13/6/9.
Umezawa T, Akahane K, Kanno A, Kawanishi T. Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society. 2013. 6833441
Umezawa, T. ; Akahane, K. ; Kanno, A. ; Kawanishi, Tetsuya. / Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. 2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society, 2013.
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abstract = "We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.",
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