Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa; K. Akahane; A. Kanno; T. Kawanishi

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

Original language	English
Title of host publication	2013 Conference on Lasers and Electro-Optics, CLEO 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781557529725
Publication status	Published - 2013 Jan 1
Externally published	Yes
Event	2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14

Publication series

Name	2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other	2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/Territory	United States
City	San Jose, CA
Period	13/6/9 → 13/6/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. / Umezawa, T.; Akahane, K.; Kanno, A.; Kawanishi, T.

2013 Conference on Lasers and Electro-Optics, CLEO 2013. IEEE Computer Society, 2013. 6833441 (2013 Conference on Lasers and Electro-Optics, CLEO 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Umezawa, T, Akahane, K, Kanno, A & Kawanishi, T 2013, Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. in 2013 Conference on Lasers and Electro-Optics, CLEO 2013., 6833441, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, IEEE Computer Society, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, San Jose, CA, United States, 13/6/9.

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title = "Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer",

abstract = "We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.",

author = "T. Umezawa and K. Akahane and A. Kanno and T. Kawanishi",

year = "2013",

month = jan,

day = "1",

language = "English",

isbn = "9781557529725",

series = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",

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note = "2013 Conference on Lasers and Electro-Optics, CLEO 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

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T1 - Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Kawanishi, T.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

AB - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

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M3 - Conference contribution

AN - SCOPUS:84903778891

SN - 9781557529725

T3 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

BT - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

PB - IEEE Computer Society

T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

Abstract

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Other

ASJC Scopus subject areas

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