Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film

Y. G. Chen, M. Ogura, H. Okushi, Naoto Kobayashi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been studied in order to investigate the electrical behavior of diamond-based electronic devices. The current-voltage (I-V) characteristics of the Ni-Schottky contacts to the boron-doped homoepitaxial diamond film show excellent rectification properties. The capacitance-voltage (C-V) features of the Ni/diamond Schottky diodes were characterized in the frequency range from 10-3 to 2 × 105 Hz. The C-V measurements indicate that the space charge density (NI) and built-in potential (Vd) values are approximately 6.0 × 1016 cm-3 and 1.25 V, respectively, and show weak frequency dependence in the range from 10-3 to 104 Hz. Capacitance-frequency measurement at zero bias indicated that the degrading capacitance at high frequency (> 104 Hz) is primarily due to the high series resistance of the homoepitaxial diamond film.

Original languageEnglish
Pages (from-to)1340-1345
Number of pages6
JournalDiamond and Related Materials
Volume12
Issue number8
DOIs
Publication statusPublished - 2003 Aug
Externally publishedYes

Keywords

  • Boron doping
  • Capacitance-voltage characteristics
  • Diamond films
  • Schottky diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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