Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film

Y. G. Chen, M. Ogura, H. Okushi, Naoto Kobayashi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been studied in order to investigate the electrical behavior of diamond-based electronic devices. The current-voltage (I-V) characteristics of the Ni-Schottky contacts to the boron-doped homoepitaxial diamond film show excellent rectification properties. The capacitance-voltage (C-V) features of the Ni/diamond Schottky diodes were characterized in the frequency range from 10-3 to 2 × 105 Hz. The C-V measurements indicate that the space charge density (NI) and built-in potential (Vd) values are approximately 6.0 × 1016 cm-3 and 1.25 V, respectively, and show weak frequency dependence in the range from 10-3 to 104 Hz. Capacitance-frequency measurement at zero bias indicated that the degrading capacitance at high frequency (> 104 Hz) is primarily due to the high series resistance of the homoepitaxial diamond film.

Original languageEnglish
Pages (from-to)1340-1345
Number of pages6
JournalDiamond and Related Materials
Volume12
Issue number8
DOIs
Publication statusPublished - 2003 Aug
Externally publishedYes

Fingerprint

Diamond
Boron
Diamond films
Schottky diodes
diamond films
Diamonds
Diodes
boron
Capacitance
capacitance
diamonds
Electric potential
electric potential
Capacitance measurement
Voltage measurement
Charge density
Electric space charge
frequency measurement
Electric properties
rectification

Keywords

  • Boron doping
  • Capacitance-voltage characteristics
  • Diamond films
  • Schottky diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film. / Chen, Y. G.; Ogura, M.; Okushi, H.; Kobayashi, Naoto.

In: Diamond and Related Materials, Vol. 12, No. 8, 08.2003, p. 1340-1345.

Research output: Contribution to journalArticle

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AU - Ogura, M.

AU - Okushi, H.

AU - Kobayashi, Naoto

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N2 - The electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been studied in order to investigate the electrical behavior of diamond-based electronic devices. The current-voltage (I-V) characteristics of the Ni-Schottky contacts to the boron-doped homoepitaxial diamond film show excellent rectification properties. The capacitance-voltage (C-V) features of the Ni/diamond Schottky diodes were characterized in the frequency range from 10-3 to 2 × 105 Hz. The C-V measurements indicate that the space charge density (NI) and built-in potential (Vd) values are approximately 6.0 × 1016 cm-3 and 1.25 V, respectively, and show weak frequency dependence in the range from 10-3 to 104 Hz. Capacitance-frequency measurement at zero bias indicated that the degrading capacitance at high frequency (> 104 Hz) is primarily due to the high series resistance of the homoepitaxial diamond film.

AB - The electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been studied in order to investigate the electrical behavior of diamond-based electronic devices. The current-voltage (I-V) characteristics of the Ni-Schottky contacts to the boron-doped homoepitaxial diamond film show excellent rectification properties. The capacitance-voltage (C-V) features of the Ni/diamond Schottky diodes were characterized in the frequency range from 10-3 to 2 × 105 Hz. The C-V measurements indicate that the space charge density (NI) and built-in potential (Vd) values are approximately 6.0 × 1016 cm-3 and 1.25 V, respectively, and show weak frequency dependence in the range from 10-3 to 104 Hz. Capacitance-frequency measurement at zero bias indicated that the degrading capacitance at high frequency (> 104 Hz) is primarily due to the high series resistance of the homoepitaxial diamond film.

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