Abstract
In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract μτ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calculation. The low mobility-lifetime (μτ) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by μτ products, it can extract μτ products. Here, we demonstrate how the model works based on the results from 2-mm-thick HPB CdZnTe and THM CdTe detectors.
| Original language | English |
|---|---|
| Pages (from-to) | 1258-1263 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 49 II |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2002 Jun |
Keywords
- CdTe
- CdZnTe
- Gamma-ray detector
- Mobility-lifetime products
- Spectral modeling
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering
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Cite this
Sato, G., Takahashi, T., Sugiho, M., Kouda, M., Mitani, T., Nakazawa, K., Okada, Y., & Watanabe, S. (2002). Characterization of CdTe/CdZnTe detectors. IEEE Transactions on Nuclear Science, 49 II(3), 1258-1263. https://doi.org/10.1109/TNS.2002.1039648