Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Keisaku Yamada, Hiroshi Kawarada, Toyohiro Chikyo, Hideomi Koinuma, Ken Hasegawa, Hitoshi Umezawa

    Research output: Contribution to journalArticle

    28 Citations (Scopus)

    Abstract

    Metal-insulator-semiconductor field-effect transistors (MISFETs) with aluminum oxide as a gate insulator have been fabricated on a hydrogen-terminated diamond surface using its surface conductive layer. The aluminum oxide gate insulator was deposited on the diamond surface by the pulsed laser deposition method. The on-off ratio measured by dc was greater than five orders of magnitude, one of the best results reported for diamond FETs. The gate leak current of aluminum oxide MISFETs is three orders of magnitude less than that of conventional CaF2 MISFETs. These characteristics indicate that aluminum oxide gate insulators are suitable for high reliability power device applications of diamond MISFETs.

    Original languageEnglish
    Article number112117
    JournalApplied Physics Letters
    Volume88
    Issue number11
    DOIs
    Publication statusPublished - 2006

    Fingerprint

    MIS (semiconductors)
    field effect transistors
    aluminum oxides
    diamonds
    insulators
    pulsed laser deposition
    hydrogen

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator. / Hirama, Kazuyuki; Miyamoto, Shingo; Matsudaira, Hiroki; Yamada, Keisaku; Kawarada, Hiroshi; Chikyo, Toyohiro; Koinuma, Hideomi; Hasegawa, Ken; Umezawa, Hitoshi.

    In: Applied Physics Letters, Vol. 88, No. 11, 112117, 2006.

    Research output: Contribution to journalArticle

    Hirama, K, Miyamoto, S, Matsudaira, H, Yamada, K, Kawarada, H, Chikyo, T, Koinuma, H, Hasegawa, K & Umezawa, H 2006, 'Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator', Applied Physics Letters, vol. 88, no. 11, 112117. https://doi.org/10.1063/1.2186072
    Hirama, Kazuyuki ; Miyamoto, Shingo ; Matsudaira, Hiroki ; Yamada, Keisaku ; Kawarada, Hiroshi ; Chikyo, Toyohiro ; Koinuma, Hideomi ; Hasegawa, Ken ; Umezawa, Hitoshi. / Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator. In: Applied Physics Letters. 2006 ; Vol. 88, No. 11.
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    AU - Kawarada, Hiroshi

    AU - Chikyo, Toyohiro

    AU - Koinuma, Hideomi

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