Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Keisaku Yamada, Hiroshi Kawarada, Toyohiro Chikyo, Hideomi Koinuma, Ken Hasegawa, Hitoshi Umezawa

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Abstract

Metal-insulator-semiconductor field-effect transistors (MISFETs) with aluminum oxide as a gate insulator have been fabricated on a hydrogen-terminated diamond surface using its surface conductive layer. The aluminum oxide gate insulator was deposited on the diamond surface by the pulsed laser deposition method. The on-off ratio measured by dc was greater than five orders of magnitude, one of the best results reported for diamond FETs. The gate leak current of aluminum oxide MISFETs is three orders of magnitude less than that of conventional CaF2 MISFETs. These characteristics indicate that aluminum oxide gate insulators are suitable for high reliability power device applications of diamond MISFETs.

Original languageEnglish
Article number112117
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
Publication statusPublished - 2006 Mar 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hirama, K., Miyamoto, S., Matsudaira, H., Yamada, K., Kawarada, H., Chikyo, T., Koinuma, H., Hasegawa, K., & Umezawa, H. (2006). Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator. Applied Physics Letters, 88(11), [112117]. https://doi.org/10.1063/1.2186072