CHARACTERIZATION OF DIAMOND PARTICLES AND FILMS FORMED BY PLASMA-ASSISTED CHEMICAL VAPOUR DEPOSITION USING HIGH-VOLTAGE ELECTRON MICROSCOPY.

Hiroshi Kawarada, King Sheng Mar, Jun ichi Suzuki, Toshimichi Ito, Hirotaro Mori, Hiroshi Fujita, Akio Hiraki

Research output: Contribution to journalArticle

Abstract

The internal and internal structures of diamond particles and films on Si substrates formed by plasma-assisted chemical vapor deposition have been investigated by high-voltage transmission electron microscopy. The feature of line defects - micro-twin lamellae or stacking faults - in a diamond particle indicates the concentric crystal growth originated from one nucleus. The particles are observed to be in direct contact with the Si substrate around the nucleation site within the resolution limit. The particles are stacked up to form a diamond film.

Original languageEnglish
Pages (from-to)1904-1906
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume26
Issue number11
Publication statusPublished - 1987 Nov 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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