Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces

J. Qiu, D. R. Menke, M. Kobayashi, R. L. Gunshor, D. Li, Y. Nakamura, N. Otsuka

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Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se 3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.

Original languageEnglish
Pages (from-to)2788-2790
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 1991 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Li, D., Nakamura, Y., & Otsuka, N. (1991). Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces. Applied Physics Letters, 58(24), 2788-2790.