Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces

J. Qiu, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor, D. Li, Y. Nakamura, N. Otsuka

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se 3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.

Original languageEnglish
Pages (from-to)2788-2790
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number24
DOIs
Publication statusPublished - 1991
Externally publishedYes

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x ray spectroscopy
zinc
photoelectron spectroscopy
nucleation
valence
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Li, D., Nakamura, Y., & Otsuka, N. (1991). Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces. Applied Physics Letters, 58(24), 2788-2790. https://doi.org/10.1063/1.104762

Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces. / Qiu, J.; Menke, D. R.; Kobayashi, Masakazu; Gunshor, R. L.; Li, D.; Nakamura, Y.; Otsuka, N.

In: Applied Physics Letters, Vol. 58, No. 24, 1991, p. 2788-2790.

Research output: Contribution to journalArticle

Qiu, J, Menke, DR, Kobayashi, M, Gunshor, RL, Li, D, Nakamura, Y & Otsuka, N 1991, 'Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces', Applied Physics Letters, vol. 58, no. 24, pp. 2788-2790. https://doi.org/10.1063/1.104762
Qiu, J. ; Menke, D. R. ; Kobayashi, Masakazu ; Gunshor, R. L. ; Li, D. ; Nakamura, Y. ; Otsuka, N. / Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces. In: Applied Physics Letters. 1991 ; Vol. 58, No. 24. pp. 2788-2790.
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