Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

H. Kato, T. Nango, T. Miyagawa, T. Katagiri, Yoshimichi Ohki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have tried to deposit these silicate films by plasma-enhanced chemical vapor deposition (PECVD). In this report, we discuss the electrical properties and chemical structure of the deposited films.

    Original languageEnglish
    Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages166-169
    Number of pages4
    ISBN (Print)4891140216, 9784891140212
    DOIs
    Publication statusPublished - 2001
    EventInternational Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
    Duration: 2001 Nov 12001 Nov 2

    Other

    OtherInternational Workshop on Gate Insulator, IWGI 2001
    CountryJapan
    CityTokyo
    Period01/11/101/11/2

    Fingerprint

    Hafnium
    Plasma enhanced chemical vapor deposition
    Zirconium
    Silicates
    Electric properties
    Permittivity
    Deposits
    zircon

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Kato, H., Nango, T., Miyagawa, T., Katagiri, T., & Ohki, Y. (2001). Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 (pp. 166-169). [967575] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2001.967575

    Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition. / Kato, H.; Nango, T.; Miyagawa, T.; Katagiri, T.; Ohki, Yoshimichi.

    Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 166-169 967575.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kato, H, Nango, T, Miyagawa, T, Katagiri, T & Ohki, Y 2001, Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001., 967575, Institute of Electrical and Electronics Engineers Inc., pp. 166-169, International Workshop on Gate Insulator, IWGI 2001, Tokyo, Japan, 01/11/1. https://doi.org/10.1109/IWGI.2001.967575
    Kato H, Nango T, Miyagawa T, Katagiri T, Ohki Y. Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 166-169. 967575 https://doi.org/10.1109/IWGI.2001.967575
    Kato, H. ; Nango, T. ; Miyagawa, T. ; Katagiri, T. ; Ohki, Yoshimichi. / Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition. Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 166-169
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