Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

H. Kato, T. Nango, T. Miyagawa, T. Katagiri, Y. Ohki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have tried to deposit these silicate films by plasma-enhanced chemical vapor deposition (PECVD). In this report, we discuss the electrical properties and chemical structure of the deposited films.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages166-169
Number of pages4
ISBN (Electronic)4891140216, 9784891140212
DOIs
Publication statusPublished - 2001 Jan 1
EventInternational Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
Duration: 2001 Nov 12001 Nov 2

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Other

OtherInternational Workshop on Gate Insulator, IWGI 2001
CountryJapan
CityTokyo
Period01/11/101/11/2

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kato, H., Nango, T., Miyagawa, T., Katagiri, T., & Ohki, Y. (2001). Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 (pp. 166-169). [967575] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2001.967575