Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

Shin Ichiro Gozu; Tomohiro Kita; Yuuki Sato; Syoji Yamada; Masaaki Tomizawa

doi:10.1016/S0022-0248(01)00655-8

Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

Shin Ichiro Gozu^*, Tomohiro Kita, Yuuki Sato, Syoji Yamada, Masaaki Tomizawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

18 Citations (Scopus)

Abstract

We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μ_e = 5.45 × 10⁵ cm² V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00655-8
Publication status	Published - 2001 Jul
Externally published	Yes
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 2000 Sept 11 → 2000 Sept 15

Keywords

A1. Low dimensional structures
A3. Molecular beam epitaxy
B1. Arsenates
B2. Semiconducting III-V materials
B3. High electron mobility transistors

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)00655-8

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title = "Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures",

abstract = "We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [{\=1} 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [{\=1} 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [{\=1} 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.",

keywords = "A1. Low dimensional structures, A3. Molecular beam epitaxy, B1. Arsenates, B2. Semiconducting III-V materials, B3. High electron mobility transistors",

author = "Gozu, {Shin Ichiro} and Tomohiro Kita and Yuuki Sato and Syoji Yamada and Masaaki Tomizawa",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00655-8",

language = "English",

volume = "227-228",

pages = "155--160",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

}

TY - JOUR

T1 - Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

AU - Gozu, Shin Ichiro

AU - Kita, Tomohiro

AU - Sato, Yuuki

AU - Yamada, Syoji

AU - Tomizawa, Masaaki

PY - 2001/7

Y1 - 2001/7

N2 - We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

AB - We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

KW - A1. Low dimensional structures

KW - A3. Molecular beam epitaxy

KW - B1. Arsenates

KW - B2. Semiconducting III-V materials

KW - B3. High electron mobility transistors

UR - http://www.scopus.com/inward/record.url?scp=0035398241&partnerID=8YFLogxK

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U2 - 10.1016/S0022-0248(01)00655-8

DO - 10.1016/S0022-0248(01)00655-8

M3 - Conference article

AN - SCOPUS:0035398241

SN - 0022-0248

VL - 227-228

SP - 155

EP - 160

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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