Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

Shin Ichiro Gozu*, Tomohiro Kita, Yuuki Sato, Syoji Yamada, Masaaki Tomizawa

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)


We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

Original languageEnglish
Pages (from-to)155-160
Number of pages6
JournalJournal of Crystal Growth
Publication statusPublished - 2001 Jul
Externally publishedYes
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 2000 Sept 112000 Sept 15


  • A1. Low dimensional structures
  • A3. Molecular beam epitaxy
  • B1. Arsenates
  • B2. Semiconducting III-V materials
  • B3. High electron mobility transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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