Characterization of high-quality polycrystalline diamond and its high FET performance

K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (fT) and power gain (fmax) were 45 and 120 GHz, respectively. The maximum drain current (IDS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.

Original languageEnglish
Pages (from-to)1954-1957
Number of pages4
JournalDiamond and Related Materials
Volume15
Issue number11-12 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Nov 1

Keywords

  • FET
  • Hydrogen-terminated
  • Polycrystalline diamond
  • RF performance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Ueda, K., Kasu, M., Yamauchi, Y., Makimoto, T., Schwitters, M., Twitchen, D. J., Scarsbrook, G. A., & Coe, S. E. (2006). Characterization of high-quality polycrystalline diamond and its high FET performance. Diamond and Related Materials, 15(11-12 SPEC. ISS.), 1954-1957. https://doi.org/10.1016/j.diamond.2006.07.021