Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

M. Hattori, Y. Nishihara, Yoshimichi Ohki, M. Fujimaki, T. Souno, H. Nishikawa, T. Yamaguchi, E. Watanabe, M. Oikawa, T. Kamiya, K. Arakawa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.

Original languageEnglish
Pages (from-to)362-365
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume191
Issue number1-4
DOIs
Publication statusPublished - 2002 May
Externally publishedYes

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Keywords

  • Electron spin resonance
  • Ion implantation
  • Silica glass
  • Vacuum ultraviolet

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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