Characterization of n-type layer by S + ion implantation in 4H-SiC

Y. Tanaka, Naoto Kobayashi, H. Okumura, S. Yoshida, M. Hasegawa, M. Ogura, H. Tanoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, F. Ren, W. Pletschen, M. Murakami
Volume622
Publication statusPublished - 2000
Externally publishedYes
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27

Other

OtherWide-Bandgap Electronic Devices
CountryUnited States
CitySan Francisco, CA
Period00/4/2400/4/27

Fingerprint

Ion implantation
Rutherford backscattering spectroscopy
Spectrometry
Photoluminescence
Activation energy
Annealing
Defects
Hall effect
Sulfur
Temperature
Structural properties
Electric properties
Optical properties
Ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tanaka, Y., Kobayashi, N., Okumura, H., Yoshida, S., Hasegawa, M., Ogura, M., & Tanoue, H. (2000). Characterization of n-type layer by S + ion implantation in 4H-SiC In R. J. Shul, F. Ren, W. Pletschen, & M. Murakami (Eds.), Materials Research Society Symposium - Proceedings (Vol. 622)

Characterization of n-type layer by S + ion implantation in 4H-SiC . / Tanaka, Y.; Kobayashi, Naoto; Okumura, H.; Yoshida, S.; Hasegawa, M.; Ogura, M.; Tanoue, H.

Materials Research Society Symposium - Proceedings. ed. / R.J. Shul; F. Ren; W. Pletschen; M. Murakami. Vol. 622 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, Y, Kobayashi, N, Okumura, H, Yoshida, S, Hasegawa, M, Ogura, M & Tanoue, H 2000, Characterization of n-type layer by S + ion implantation in 4H-SiC in RJ Shul, F Ren, W Pletschen & M Murakami (eds), Materials Research Society Symposium - Proceedings. vol. 622, Wide-Bandgap Electronic Devices, San Francisco, CA, United States, 00/4/24.
Tanaka Y, Kobayashi N, Okumura H, Yoshida S, Hasegawa M, Ogura M et al. Characterization of n-type layer by S + ion implantation in 4H-SiC In Shul RJ, Ren F, Pletschen W, Murakami M, editors, Materials Research Society Symposium - Proceedings. Vol. 622. 2000
Tanaka, Y. ; Kobayashi, Naoto ; Okumura, H. ; Yoshida, S. ; Hasegawa, M. ; Ogura, M. ; Tanoue, H. / Characterization of n-type layer by S + ion implantation in 4H-SiC Materials Research Society Symposium - Proceedings. editor / R.J. Shul ; F. Ren ; W. Pletschen ; M. Murakami. Vol. 622 2000.
@inproceedings{b75dcccd01794f1eb1cfebb335db4c8f,
title = "Characterization of n-type layer by S + ion implantation in 4H-SiC",
abstract = "We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.",
author = "Y. Tanaka and Naoto Kobayashi and H. Okumura and S. Yoshida and M. Hasegawa and M. Ogura and H. Tanoue",
year = "2000",
language = "English",
volume = "622",
editor = "R.J. Shul and F. Ren and W. Pletschen and M. Murakami",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Characterization of n-type layer by S + ion implantation in 4H-SiC

AU - Tanaka, Y.

AU - Kobayashi, Naoto

AU - Okumura, H.

AU - Yoshida, S.

AU - Hasegawa, M.

AU - Ogura, M.

AU - Tanoue, H.

PY - 2000

Y1 - 2000

N2 - We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

AB - We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

UR - http://www.scopus.com/inward/record.url?scp=0034431258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034431258&partnerID=8YFLogxK

M3 - Conference contribution

VL - 622

BT - Materials Research Society Symposium - Proceedings

A2 - Shul, R.J.

A2 - Ren, F.

A2 - Pletschen, W.

A2 - Murakami, M.

ER -