Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

T. Suga, S. Kameyama, S. Yoshioka, Tomoyuki Yamamoto, I. Tanaka, T. Mizoguchi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

Original languageEnglish
Article number163113
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number16
DOIs
Publication statusPublished - 2005 Apr 18
Externally publishedYes

Fingerprint

x ray absorption
thin films
pulsed laser deposition
electron microscopy
sapphire
x ray diffraction
vacuum
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures. / Suga, T.; Kameyama, S.; Yoshioka, S.; Yamamoto, Tomoyuki; Tanaka, I.; Mizoguchi, T.

In: Applied Physics Letters, Vol. 86, No. 16, 163113, 18.04.2005, p. 1-3.

Research output: Contribution to journalArticle

Suga, T, Kameyama, S, Yoshioka, S, Yamamoto, T, Tanaka, I & Mizoguchi, T 2005, 'Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures', Applied Physics Letters, vol. 86, no. 16, 163113, pp. 1-3. https://doi.org/10.1063/1.1904714
Suga, T. ; Kameyama, S. ; Yoshioka, S. ; Yamamoto, Tomoyuki ; Tanaka, I. ; Mizoguchi, T. / Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures. In: Applied Physics Letters. 2005 ; Vol. 86, No. 16. pp. 1-3.
@article{0a2f764105ab4ab495846b7d5fc7b2cc,
title = "Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures",
abstract = "AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.",
author = "T. Suga and S. Kameyama and S. Yoshioka and Tomoyuki Yamamoto and I. Tanaka and T. Mizoguchi",
year = "2005",
month = "4",
day = "18",
doi = "10.1063/1.1904714",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

AU - Suga, T.

AU - Kameyama, S.

AU - Yoshioka, S.

AU - Yamamoto, Tomoyuki

AU - Tanaka, I.

AU - Mizoguchi, T.

PY - 2005/4/18

Y1 - 2005/4/18

N2 - AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

AB - AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

UR - http://www.scopus.com/inward/record.url?scp=20844458576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844458576&partnerID=8YFLogxK

U2 - 10.1063/1.1904714

DO - 10.1063/1.1904714

M3 - Article

AN - SCOPUS:20844458576

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 163113

ER -