Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

T. Suga, S. Kameyama, S. Yoshioka, Tomoyuki Yamamoto, I. Tanaka, T. Mizoguchi

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Abstract

AlN thin films have been grown on c -cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5× 10-4 Pa was used to examine the crystallographic orientation dependence of Al K -edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7× 10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

Original languageEnglish
Article number163113
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number16
DOIs
Publication statusPublished - 2005 Apr 18
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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