S. Yokoyama, N. Kajihara, M. Hirose, Y. Osaka, T. Yoshihara, H. Abe

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Structural and electrical properties of plasma-deposited silicon nitride (SiN) have been studied. The compositional ratio of Si to N estimated by Auger analysis is found to be uniform in the direction of the film thickness. The numbers of Si-H and N-H bonds of the order of 10**2**1/cm**3 have been obtained bY calculating the vibrational spectra. The two types of trapping states whch are responsible for the Poole-Frenkel conduction are found. the barrier height at the SiN/Si interface is determined. Current transport mechanism through SiN films are quantitatively discussed, and it is shown that the carrier transport is dominated by the Fowler-Nordheim tunneling at low temperatures and by the Poole-Frenkel conduction at high temperatures.

Original languageEnglish
Pages (from-to)5470-5474
Number of pages5
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1980 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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    Yokoyama, S., Kajihara, N., Hirose, M., Osaka, Y., Yoshihara, T., & Abe, H. (1980). CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS. Journal of Applied Physics, 51(10), 5470-5474.