CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS.

S. Yokoyama, N. Kajihara, M. Hirose, Y. Osaka, T. Yoshihara, H. Abe

Research output: Contribution to journalArticle

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Abstract

Structural and electrical properties of plasma-deposited silicon nitride (SiN) have been studied. The compositional ratio of Si to N estimated by Auger analysis is found to be uniform in the direction of the film thickness. The numbers of Si-H and N-H bonds of the order of 10**2**1/cm**3 have been obtained bY calculating the vibrational spectra. The two types of trapping states whch are responsible for the Poole-Frenkel conduction are found. the barrier height at the SiN/Si interface is determined. Current transport mechanism through SiN films are quantitatively discussed, and it is shown that the carrier transport is dominated by the Fowler-Nordheim tunneling at low temperatures and by the Poole-Frenkel conduction at high temperatures.

Original languageEnglish
Pages (from-to)5470-5474
Number of pages5
JournalJournal of Applied Physics
Volume51
Issue number10
DOIs
Publication statusPublished - 1980 Oct
Externally publishedYes

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silicon nitrides
conduction
vibrational spectra
film thickness
trapping
electrical properties

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Yokoyama, S., Kajihara, N., Hirose, M., Osaka, Y., Yoshihara, T., & Abe, H. (1980). CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS. Journal of Applied Physics, 51(10), 5470-5474. https://doi.org/10.1063/1.327505

CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS. / Yokoyama, S.; Kajihara, N.; Hirose, M.; Osaka, Y.; Yoshihara, T.; Abe, H.

In: Journal of Applied Physics, Vol. 51, No. 10, 10.1980, p. 5470-5474.

Research output: Contribution to journalArticle

Yokoyama, S, Kajihara, N, Hirose, M, Osaka, Y, Yoshihara, T & Abe, H 1980, 'CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS.', Journal of Applied Physics, vol. 51, no. 10, pp. 5470-5474. https://doi.org/10.1063/1.327505
Yokoyama S, Kajihara N, Hirose M, Osaka Y, Yoshihara T, Abe H. CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS. Journal of Applied Physics. 1980 Oct;51(10):5470-5474. https://doi.org/10.1063/1.327505
Yokoyama, S. ; Kajihara, N. ; Hirose, M. ; Osaka, Y. ; Yoshihara, T. ; Abe, H. / CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS. In: Journal of Applied Physics. 1980 ; Vol. 51, No. 10. pp. 5470-5474.
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