Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy

Hiroshi Kawarada, Tomo Ueno, Iwao Ohdomari, Yasuo Kunii

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using high-resolution transmission electron microscopy, we have characterized on an atomic scale the interfacial roughness and the interfacial defects at the Si/SiO2 interface obtained by lateral solid phase epitaxial growth of Si on SiO2. At the matrix/SiO2 interface, the protrusions of Si with 2-3 Si(200) lattice planes make the interface indented. These images can be explained by the pyramid-type or edge-type pseudo Si(100)/SiO2 interface models composed of small {111} facets. Defects, mainly microtwins, are localized only within 50 nm from the interface, and are adjacent to the SiO2. It indicates that microtwins are interface-related and are supposed to form from atomic scale indents of the original a-Si/SiO2 interface.

Original languageEnglish
Pages (from-to)2641-2644
Number of pages4
JournalJournal of Applied Physics
Volume63
Issue number8
DOIs
Publication statusPublished - 1988 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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