Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy

Hiroshi Kawarada, Tomo Ueno, Iwao Ohdomari, Yasuo Kunii

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    Using high-resolution transmission electron microscopy, we have characterized on an atomic scale the interfacial roughness and the interfacial defects at the Si/SiO2 interface obtained by lateral solid phase epitaxial growth of Si on SiO2. At the matrix/SiO2 interface, the protrusions of Si with 2-3 Si(200) lattice planes make the interface indented. These images can be explained by the pyramid-type or edge-type pseudo Si(100)/SiO2 interface models composed of small {111} facets. Defects, mainly microtwins, are localized only within 50 nm from the interface, and are adjacent to the SiO2. It indicates that microtwins are interface-related and are supposed to form from atomic scale indents of the original a-Si/SiO2 interface.

    Original languageEnglish
    Pages (from-to)2641-2644
    Number of pages4
    JournalJournal of Applied Physics
    Issue number8
    Publication statusPublished - 1988


    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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