Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy

Hiroshi Kawarada, Tomo Ueno, Iwao Ohdomari, Yasuo Kunii

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Using high-resolution transmission electron microscopy, we have characterized on an atomic scale the interfacial roughness and the interfacial defects at the Si/SiO2 interface obtained by lateral solid phase epitaxial growth of Si on SiO2. At the matrix/SiO2 interface, the protrusions of Si with 2-3 Si(200) lattice planes make the interface indented. These images can be explained by the pyramid-type or edge-type pseudo Si(100)/SiO2 interface models composed of small {111} facets. Defects, mainly microtwins, are localized only within 50 nm from the interface, and are adjacent to the SiO2. It indicates that microtwins are interface-related and are supposed to form from atomic scale indents of the original a-Si/SiO2 interface.

    Original languageEnglish
    Pages (from-to)2641-2644
    Number of pages4
    JournalJournal of Applied Physics
    Volume63
    Issue number8
    DOIs
    Publication statusPublished - 1988

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    epitaxy
    solid phases
    electron microscopy
    roughness
    high resolution
    defects
    pyramids
    flat surfaces
    transmission electron microscopy
    matrices

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy. / Kawarada, Hiroshi; Ueno, Tomo; Ohdomari, Iwao; Kunii, Yasuo.

    In: Journal of Applied Physics, Vol. 63, No. 8, 1988, p. 2641-2644.

    Research output: Contribution to journalArticle

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    abstract = "Using high-resolution transmission electron microscopy, we have characterized on an atomic scale the interfacial roughness and the interfacial defects at the Si/SiO2 interface obtained by lateral solid phase epitaxial growth of Si on SiO2. At the matrix/SiO2 interface, the protrusions of Si with 2-3 Si(200) lattice planes make the interface indented. These images can be explained by the pyramid-type or edge-type pseudo Si(100)/SiO2 interface models composed of small {111} facets. Defects, mainly microtwins, are localized only within 50 nm from the interface, and are adjacent to the SiO2. It indicates that microtwins are interface-related and are supposed to form from atomic scale indents of the original a-Si/SiO2 interface.",
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    AU - Kunii, Yasuo

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