Characterization of SWNT-thin-film transistors

Masashi Shiraishi, Tomohiro Fukao, Shuichi Nakamura, Taishi Takenobu, Y. Iwasa, H. Kataura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages554-557
Number of pages4
Volume786
DOIs
Publication statusPublished - 2005 Sep 27
Externally publishedYes
EventELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol
Duration: 2005 Mar 122005 Mar 19

Other

OtherELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
CityKirchberg, Tirol
Period05/3/1205/3/19

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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