Characterization of SWNT-thin-film transistors

Masashi Shiraishi; Tomohiro Fukao; Shuichi Nakamura; Taishi Takenobu; Y. Iwasa; H. Kataura

doi:10.1063/1.2103929

Characterization of SWNT-thin-film transistors

Masashi Shiraishi, Tomohiro Fukao, Shuichi Nakamura, Taishi Takenobu, Y. Iwasa, H. Kataura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm ²/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 10². To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm²/Vs of mobility and 10⁶ of the on/off ratio were simultaneously achieved.

Original language	English
Title of host publication	AIP Conference Proceedings
Pages	554-557
Number of pages	4
Volume	786
DOIs	https://doi.org/10.1063/1.2103929
Publication status	Published - 2005 Sep 27
Externally published	Yes
Event	ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol Duration: 2005 Mar 12 → 2005 Mar 19

Other

Other	ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
City	Kirchberg, Tirol
Period	05/3/12 → 05/3/19

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2103929

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Shiraishi, M, Fukao, T, Nakamura, S, Takenobu, T, Iwasa, Y & Kataura, H 2005, Characterization of SWNT-thin-film transistors. in AIP Conference Proceedings. vol. 786, pp. 554-557, ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, 05/3/12. https://doi.org/10.1063/1.2103929

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author = "Masashi Shiraishi and Tomohiro Fukao and Shuichi Nakamura and Taishi Takenobu and Y. Iwasa and H. Kataura",

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T1 - Characterization of SWNT-thin-film transistors

AU - Shiraishi, Masashi

AU - Fukao, Tomohiro

AU - Nakamura, Shuichi

AU - Takenobu, Taishi

AU - Iwasa, Y.

AU - Kataura, H.

PY - 2005/9/27

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N2 - Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.

AB - Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.

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