Abstract
Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.
Original language | English |
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Title of host publication | AIP Conference Proceedings |
Pages | 554-557 |
Number of pages | 4 |
Volume | 786 |
DOIs | |
Publication status | Published - 2005 Sep 27 |
Externally published | Yes |
Event | ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol Duration: 2005 Mar 12 → 2005 Mar 19 |
Other
Other | ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials |
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City | Kirchberg, Tirol |
Period | 05/3/12 → 05/3/19 |
ASJC Scopus subject areas
- Physics and Astronomy(all)