Abstract
Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 554-557 |
| Number of pages | 4 |
| Volume | 786 |
| DOIs | |
| Publication status | Published - 2005 Sep 27 |
| Externally published | Yes |
| Event | ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol Duration: 2005 Mar 12 → 2005 Mar 19 |
Other
| Other | ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials |
|---|---|
| City | Kirchberg, Tirol |
| Period | 05/3/12 → 05/3/19 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Characterization of SWNT-thin-film transistors. / Shiraishi, Masashi; Fukao, Tomohiro; Nakamura, Shuichi; Takenobu, Taishi; Iwasa, Y.; Kataura, H.
AIP Conference Proceedings. Vol. 786 2005. p. 554-557.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of SWNT-thin-film transistors
AU - Shiraishi, Masashi
AU - Fukao, Tomohiro
AU - Nakamura, Shuichi
AU - Takenobu, Taishi
AU - Iwasa, Y.
AU - Kataura, H.
PY - 2005/9/27
Y1 - 2005/9/27
N2 - Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.
AB - Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.
UR - http://www.scopus.com/inward/record.url?scp=33749663828&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749663828&partnerID=8YFLogxK
U2 - 10.1063/1.2103929
DO - 10.1063/1.2103929
M3 - Conference contribution
AN - SCOPUS:33749663828
SN - 0735402752
SN - 9780735402751
VL - 786
SP - 554
EP - 557
BT - AIP Conference Proceedings
ER -