Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits

R. Goda; S. Amakawa; K. Katayama; K. Takano; T. Yoshida; M. Fujishima

doi:10.1109/ICMTS.2015.7106098

Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits

R. Goda, S. Amakawa, K. Katayama, K. Takano, T. Yoshida, M. Fujishima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

A wideband decoupling power line for millimeter-wave circuits can be realized with a transmission line having an extremely low characteristic impedance, Z₀ → 0ω. It is, however, very difficult to characterize such a line with the ordinary two-port S-parameter measurement. This paper presents an alternative measurement technique that uses transmission line stubs. The measurement results confirm that a power line impedance below 1ω is successfully achieved over a very wide frequency range (> 80 GHz). A measurement-based method of finding the necessary length of such a low-impedance line for realizing good decoupling is also proposed.

Original language	English
Title of host publication	ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	220-223
Number of pages	4
ISBN (Electronic)	9781479983025
DOIs	https://doi.org/10.1109/ICMTS.2015.7106098
Publication status	Published - 2015 May 12
Externally published	Yes
Event	2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015 - Tempe, United States Duration: 2015 Mar 23 → 2015 Mar 26

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2015-May

Other

Other	2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015
Country/Territory	United States
City	Tempe
Period	15/3/23 → 15/3/26

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICMTS.2015.7106098

Cite this

Goda, R., Amakawa, S., Katayama, K., Takano, K., Yoshida, T., & Fujishima, M. (2015). Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits. In ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures (pp. 220-223). [7106098] (IEEE International Conference on Microelectronic Test Structures; Vol. 2015-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2015.7106098

Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits. / Goda, R.; Amakawa, S.; Katayama, K.; Takano, K.; Yoshida, T.; Fujishima, M.

ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures. Institute of Electrical and Electronics Engineers Inc., 2015. p. 220-223 7106098 (IEEE International Conference on Microelectronic Test Structures; Vol. 2015-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Goda, R, Amakawa, S, Katayama, K, Takano, K, Yoshida, T & Fujishima, M 2015, Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits. in ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures., 7106098, IEEE International Conference on Microelectronic Test Structures, vol. 2015-May, Institute of Electrical and Electronics Engineers Inc., pp. 220-223, 2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015, Tempe, United States, 15/3/23. https://doi.org/10.1109/ICMTS.2015.7106098

Goda R, Amakawa S, Katayama K, Takano K, Yoshida T, Fujishima M. Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits. In ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures. Institute of Electrical and Electronics Engineers Inc. 2015. p. 220-223. 7106098. (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2015.7106098

Goda, R. ; Amakawa, S. ; Katayama, K. ; Takano, K. ; Yoshida, T. ; Fujishima, M. / Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits. ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 220-223 (IEEE International Conference on Microelectronic Test Structures).

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abstract = "A wideband decoupling power line for millimeter-wave circuits can be realized with a transmission line having an extremely low characteristic impedance, Z0 → 0ω. It is, however, very difficult to characterize such a line with the ordinary two-port S-parameter measurement. This paper presents an alternative measurement technique that uses transmission line stubs. The measurement results confirm that a power line impedance below 1ω is successfully achieved over a very wide frequency range (> 80 GHz). A measurement-based method of finding the necessary length of such a low-impedance line for realizing good decoupling is also proposed.",

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AB - A wideband decoupling power line for millimeter-wave circuits can be realized with a transmission line having an extremely low characteristic impedance, Z0 → 0ω. It is, however, very difficult to characterize such a line with the ordinary two-port S-parameter measurement. This paper presents an alternative measurement technique that uses transmission line stubs. The measurement results confirm that a power line impedance below 1ω is successfully achieved over a very wide frequency range (> 80 GHz). A measurement-based method of finding the necessary length of such a low-impedance line for realizing good decoupling is also proposed.

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Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits

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