We have studied the chemical potential shift in (Formula presented) and the charge ordering transition in (Formula presented) by photoemission spectroscopy. The result shows a large (Formula presented) downward shift of the chemical potential with hole doping in the high-doping regime (Formula presented) while the shift is suppressed in the low-doping regime (Formula presented) This suppression is attributed to a segregation of doped holes on a microscopic scale when the hole concentration is lower than (Formula presented) In the (Formula presented) sample, the photoemission intensity at the chemical potential vanishes below the charge ordering transition temperature (Formula presented).
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics