Abstract
Yttrium barium copper oxide system, which undergoes a metal-to-insulator transition under variation of carrier concentration, was investigated using Raman spectroscopy. The intensity of CuO2-plane phonon modes decreased as the system approached the metal-to-insulator phase boundary and it scaled with the inverse of the hole concentration within the CuO2 conducting planes. The CuO2-plane mode intensity and transition temperature for the oxides was found to be correlated. It was found that a simple and useful probe for metal-to-insulator transition and carrier dynamics in the CuO2 plane for substituted materials was provided by this correlation and the CuO2-plane mode intensity.
Original language | English |
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Pages (from-to) | 4988-4990 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2002 Dec 23 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)