Abstract
Yttrium barium copper oxide system, which undergoes a metal-to-insulator transition under variation of carrier concentration, was investigated using Raman spectroscopy. The intensity of CuO2-plane phonon modes decreased as the system approached the metal-to-insulator phase boundary and it scaled with the inverse of the hole concentration within the CuO2 conducting planes. The CuO2-plane mode intensity and transition temperature for the oxides was found to be correlated. It was found that a simple and useful probe for metal-to-insulator transition and carrier dynamics in the CuO2 plane for substituted materials was provided by this correlation and the CuO2-plane mode intensity.
| Original language | English |
|---|---|
| Pages (from-to) | 4988-4990 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 2002 Dec 23 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Charge redistribution in YBa2Cu3O7-d probed by Raman spectroscopy : CuO2-plane phonon as a probe of carrier dynamics in the CuO2 plane. / Osada, Minoru; Kakihana, Masato; Käll, Mikael; Börjesson, Lars.
In: Applied Physics Letters, Vol. 81, No. 26, 23.12.2002, p. 4988-4990.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge redistribution in YBa2Cu3O7-d probed by Raman spectroscopy
T2 - CuO2-plane phonon as a probe of carrier dynamics in the CuO2 plane
AU - Osada, Minoru
AU - Kakihana, Masato
AU - Käll, Mikael
AU - Börjesson, Lars
PY - 2002/12/23
Y1 - 2002/12/23
N2 - Yttrium barium copper oxide system, which undergoes a metal-to-insulator transition under variation of carrier concentration, was investigated using Raman spectroscopy. The intensity of CuO2-plane phonon modes decreased as the system approached the metal-to-insulator phase boundary and it scaled with the inverse of the hole concentration within the CuO2 conducting planes. The CuO2-plane mode intensity and transition temperature for the oxides was found to be correlated. It was found that a simple and useful probe for metal-to-insulator transition and carrier dynamics in the CuO2 plane for substituted materials was provided by this correlation and the CuO2-plane mode intensity.
AB - Yttrium barium copper oxide system, which undergoes a metal-to-insulator transition under variation of carrier concentration, was investigated using Raman spectroscopy. The intensity of CuO2-plane phonon modes decreased as the system approached the metal-to-insulator phase boundary and it scaled with the inverse of the hole concentration within the CuO2 conducting planes. The CuO2-plane mode intensity and transition temperature for the oxides was found to be correlated. It was found that a simple and useful probe for metal-to-insulator transition and carrier dynamics in the CuO2 plane for substituted materials was provided by this correlation and the CuO2-plane mode intensity.
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U2 - 10.1063/1.1529082
DO - 10.1063/1.1529082
M3 - Article
VL - 81
SP - 4988
EP - 4990
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
ER -