CHARGE WAVEFORM OF A NEW TWO-DIMENSIONAL POSITION-SENSITIVE SILICON DETECTOR.

Nobuyuki Hasebe, Yasuo Ezawa, Hisashi Yoshi, Tomoki Yanagimachi

Research output: Chapter in Book/Report/Conference proceedingChapter

19 Citations (Scopus)

Abstract

The operation principles of the two-dimensional position-sensitive silicon detector newly developed by T. Doke et al. were studied using a simple model. This model treats the detector as an area of continuously distributed capacitance C and resistance R//s of position surface layer. A linear relationship can then be obtained between the position of the incident particle and charge collected at the corner contacts of the detector. The kinetics of charge collected at corner contacts, ballistic deficit and noise were calculated. Rise time of the charge pulse (10-90 percent) was found to vary with the position of incidence up to about R//sC/8. It was found that a shaping time constant longer than R//sC/3 is required for pulse shaping with single CR-differentiation and single CR-integration in order to obtain a ballistic deficit of less than 1 percent.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages816-820
Number of pages5
Volume27
Edition5
Publication statusPublished - 1988 May
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hasebe, N., Ezawa, Y., Yoshi, H., & Yanagimachi, T. (1988). CHARGE WAVEFORM OF A NEW TWO-DIMENSIONAL POSITION-SENSITIVE SILICON DETECTOR. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes (5 ed., Vol. 27, pp. 816-820)