Chemical bonding properties of cubic III-nitride semiconductors

Kazuhiro Shimada*, Takayuki Sota, Katsuo Suzuki, Hajime Okumura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We report on the chemical trends of the physical quantities of cubic III nitrides obtained from first-principles calculations on the basis of the density functional theory within the local density approximation. The results are compared to experimental results of the element semiconductors including diamond, and of III-V and II-VI compound semiconductors. It has been found that (a) BN has strong covalent character comparable to diamond, (b) the chemical bonding properties of AIN and GaN are located in the intermediate between that of other III-V and II-VI materials, and (c) the bond angle of InN is easy to bend more than the other typical III-V, II-VI, and I-VII materials.

Original languageEnglish
Pages (from-to)122-123
Number of pages2
JournalProgress of Theoretical Physics Supplement
Issue number138
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Chemical bonding properties of cubic III-nitride semiconductors'. Together they form a unique fingerprint.

Cite this