TY - JOUR
T1 - Chemical bonding properties of cubic III-nitride semiconductors
AU - Shimada, Kazuhiro
AU - Sota, Takayuki
AU - Suzuki, Katsuo
AU - Okumura, Hajime
PY - 2000
Y1 - 2000
N2 - We report on the chemical trends of the physical quantities of cubic III nitrides obtained from first-principles calculations on the basis of the density functional theory within the local density approximation. The results are compared to experimental results of the element semiconductors including diamond, and of III-V and II-VI compound semiconductors. It has been found that (a) BN has strong covalent character comparable to diamond, (b) the chemical bonding properties of AIN and GaN are located in the intermediate between that of other III-V and II-VI materials, and (c) the bond angle of InN is easy to bend more than the other typical III-V, II-VI, and I-VII materials.
AB - We report on the chemical trends of the physical quantities of cubic III nitrides obtained from first-principles calculations on the basis of the density functional theory within the local density approximation. The results are compared to experimental results of the element semiconductors including diamond, and of III-V and II-VI compound semiconductors. It has been found that (a) BN has strong covalent character comparable to diamond, (b) the chemical bonding properties of AIN and GaN are located in the intermediate between that of other III-V and II-VI materials, and (c) the bond angle of InN is easy to bend more than the other typical III-V, II-VI, and I-VII materials.
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U2 - 10.1143/PTPS.138.122
DO - 10.1143/PTPS.138.122
M3 - Article
AN - SCOPUS:0034337219
SN - 0033-068X
SP - 122
EP - 123
JO - Progress of Theoretical Physics
JF - Progress of Theoretical Physics
IS - 138
ER -