Chemical bonding properties of cubic III-nitride semiconductors

Kazuhiro Shimada, Takayuki Sota, Katsuo Suzuki, Hajime Okumura

    Research output: Contribution to journalArticle

    Abstract

    We report on the chemical trends of the physical quantities of cubic III nitrides obtained from first-principles calculations on the basis of the density functional theory within the local density approximation. The results are compared to experimental results of the element semiconductors including diamond, and of III-V and II-VI compound semiconductors. It has been found that (a) BN has strong covalent character comparable to diamond, (b) the chemical bonding properties of AIN and GaN are located in the intermediate between that of other III-V and II-VI materials, and (c) the bond angle of InN is easy to bend more than the other typical III-V, II-VI, and I-VII materials.

    Original languageEnglish
    Pages (from-to)122-123
    Number of pages2
    JournalProgress of Theoretical Physics Supplement
    Issue number138
    Publication statusPublished - 2000

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    nitrides
    diamonds
    density functional theory
    trends
    approximation

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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    Chemical bonding properties of cubic III-nitride semiconductors. / Shimada, Kazuhiro; Sota, Takayuki; Suzuki, Katsuo; Okumura, Hajime.

    In: Progress of Theoretical Physics Supplement, No. 138, 2000, p. 122-123.

    Research output: Contribution to journalArticle

    Shimada, Kazuhiro ; Sota, Takayuki ; Suzuki, Katsuo ; Okumura, Hajime. / Chemical bonding properties of cubic III-nitride semiconductors. In: Progress of Theoretical Physics Supplement. 2000 ; No. 138. pp. 122-123.
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