Chemical etching properties of highly thermal conductive AIN ceramics for electroless Ni-P metallization

Tetsuya Osaka, Toshiaki Asada, Eiji Nakajima, Ichiro Koiwa

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The adhesion strength between AlN ceramics and electroless plated Ni-P film was investigated from the viewpoint of the chemical etching behavior. It was confirmed that chemical etching proceeds in two stages. The first etching stage is the selective dissolution of the Ca atoms, which are added as a sintering aid. At the second etching stage, the AlN grains also begin to be etched, and thus, the spaces between the grains are widened. In this etching stage, the adhesion strength gradually decreases with an increase in the dissolved amount of the AlN substrate. In conclusion, it is very important to consider the etching morphology and mechanism, including the process of substrate formation (i.e., sintering aid in the substrate) in order to get a higher adhesion strength for the electroless plating metallization.

Original languageEnglish
Pages (from-to)2578-2581
Number of pages4
JournalJournal of the Electrochemical Society
Volume135
Issue number10
Publication statusPublished - 1988 Oct

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Metallizing
Etching
etching
ceramics
Bond strength (materials)
adhesion
sintering
Substrates
Sintering
Electroless plating
plating
Hot Temperature
dissolving
Dissolution
Atoms
atoms

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chemical etching properties of highly thermal conductive AIN ceramics for electroless Ni-P metallization. / Osaka, Tetsuya; Asada, Toshiaki; Nakajima, Eiji; Koiwa, Ichiro.

In: Journal of the Electrochemical Society, Vol. 135, No. 10, 10.1988, p. 2578-2581.

Research output: Contribution to journalArticle

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