Abstract
Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 473-475 |
| Number of pages | 3 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 242 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2006 Jan 1 |
Keywords
- Amorphous structure
- Atomic pair-distribution function
- Silicon carbide
- Transmission electron microscopy
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Ishimaru, M., Bae, I. T., Hirata, A., Hirotsu, Y., Valdez, J. A., & Sickafus, K. E. (2006). Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242(1-2), 473-475. https://doi.org/10.1016/j.nimb.2005.08.066