Abstract
Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 473-475 |
| Number of pages | 3 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 242 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2006 Jan 1 |
| Externally published | Yes |
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Keywords
- Amorphous structure
- Atomic pair-distribution function
- Silicon carbide
- Transmission electron microscopy
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Chemical short-range order in ion-beam-induced amorphous SiC : Irradiation temperature dependence. / Ishimaru, Manabu; Bae, In Tae; Hirata, Akihiko; Hirotsu, Yoshihiko; Valdez, James A.; Sickafus, Kurt E.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.01.2006, p. 473-475.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Chemical short-range order in ion-beam-induced amorphous SiC
T2 - Irradiation temperature dependence
AU - Ishimaru, Manabu
AU - Bae, In Tae
AU - Hirata, Akihiko
AU - Hirotsu, Yoshihiko
AU - Valdez, James A.
AU - Sickafus, Kurt E.
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
AB - Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
KW - Amorphous structure
KW - Atomic pair-distribution function
KW - Silicon carbide
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=28544448744&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28544448744&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2005.08.066
DO - 10.1016/j.nimb.2005.08.066
M3 - Article
AN - SCOPUS:28544448744
VL - 242
SP - 473
EP - 475
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
ER -