TY - JOUR
T1 - Chemical short-range order in ion-beam-induced amorphous SiC
T2 - Irradiation temperature dependence
AU - Ishimaru, Manabu
AU - Bae, In Tae
AU - Hirata, Akihiko
AU - Hirotsu, Yoshihiko
AU - Valdez, James A.
AU - Sickafus, Kurt E.
N1 - Funding Information:
This work was sponsored by 21st COE program “Towards Creating New Industries Based on Inter-Nanoscience”, Special coordination fund for Promoting Science and Technology on “Nanohetero Metallic Materials”, and the US Department of Energy, Office of Basic Sciences, Division of Materials Sciences and Engineering.
PY - 2006/1
Y1 - 2006/1
N2 - Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
AB - Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.
KW - Amorphous structure
KW - Atomic pair-distribution function
KW - Silicon carbide
KW - Transmission electron microscopy
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U2 - 10.1016/j.nimb.2005.08.066
DO - 10.1016/j.nimb.2005.08.066
M3 - Article
AN - SCOPUS:28544448744
VL - 242
SP - 473
EP - 475
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
ER -