Clarification of nitridation effect on oxide formation methods

Takashi Kuroi, Masayoshi Shirahata, Yoshinori Okumura, Satoshi Shimizu, Akinobu Teramoto, Masatoshi Anma, Masahide Inuishi, Hirokazu Miyoshi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxide films formed in a pyrogenic steam ambient, those in a dry oxygen ambient, chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improved by nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.

Original languageEnglish
Pages (from-to)1454-1459
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Nitridation
Oxide films
oxide films
Oxides
oxides
Gate dielectrics
Chemical vapor deposition
implantation
vapor deposition
Nitrogen
nitrogen
Electron traps
Hot carriers
Interface states
Ion implantation
steam
Steam
retarding
traps
degradation

Keywords

  • CMOS
  • CVD
  • Electron trap
  • Hot carrier
  • Interface state
  • Nitrided oxide
  • Nitrogen ion implantation
  • Oxide reliability
  • Silicon
  • Stacked oxide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Kuroi, T., Shirahata, M., Okumura, Y., Shimizu, S., Teramoto, A., Anma, M., ... Miyoshi, H. (1996). Clarification of nitridation effect on oxide formation methods. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(2 SUPPL. B), 1454-1459.

Clarification of nitridation effect on oxide formation methods. / Kuroi, Takashi; Shirahata, Masayoshi; Okumura, Yoshinori; Shimizu, Satoshi; Teramoto, Akinobu; Anma, Masatoshi; Inuishi, Masahide; Miyoshi, Hirokazu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 2 SUPPL. B, 02.1996, p. 1454-1459.

Research output: Contribution to journalArticle

Kuroi, T, Shirahata, M, Okumura, Y, Shimizu, S, Teramoto, A, Anma, M, Inuishi, M & Miyoshi, H 1996, 'Clarification of nitridation effect on oxide formation methods', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 35, no. 2 SUPPL. B, pp. 1454-1459.
Kuroi T, Shirahata M, Okumura Y, Shimizu S, Teramoto A, Anma M et al. Clarification of nitridation effect on oxide formation methods. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 Feb;35(2 SUPPL. B):1454-1459.
Kuroi, Takashi ; Shirahata, Masayoshi ; Okumura, Yoshinori ; Shimizu, Satoshi ; Teramoto, Akinobu ; Anma, Masatoshi ; Inuishi, Masahide ; Miyoshi, Hirokazu. / Clarification of nitridation effect on oxide formation methods. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 ; Vol. 35, No. 2 SUPPL. B. pp. 1454-1459.
@article{da6d4a4fefcc41f8a7b11d9c4517bd63,
title = "Clarification of nitridation effect on oxide formation methods",
abstract = "The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxide films formed in a pyrogenic steam ambient, those in a dry oxygen ambient, chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improved by nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.",
keywords = "CMOS, CVD, Electron trap, Hot carrier, Interface state, Nitrided oxide, Nitrogen ion implantation, Oxide reliability, Silicon, Stacked oxide",
author = "Takashi Kuroi and Masayoshi Shirahata and Yoshinori Okumura and Satoshi Shimizu and Akinobu Teramoto and Masatoshi Anma and Masahide Inuishi and Hirokazu Miyoshi",
year = "1996",
month = "2",
language = "English",
volume = "35",
pages = "1454--1459",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2 SUPPL. B",

}

TY - JOUR

T1 - Clarification of nitridation effect on oxide formation methods

AU - Kuroi, Takashi

AU - Shirahata, Masayoshi

AU - Okumura, Yoshinori

AU - Shimizu, Satoshi

AU - Teramoto, Akinobu

AU - Anma, Masatoshi

AU - Inuishi, Masahide

AU - Miyoshi, Hirokazu

PY - 1996/2

Y1 - 1996/2

N2 - The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxide films formed in a pyrogenic steam ambient, those in a dry oxygen ambient, chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improved by nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.

AB - The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxide films formed in a pyrogenic steam ambient, those in a dry oxygen ambient, chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improved by nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.

KW - CMOS

KW - CVD

KW - Electron trap

KW - Hot carrier

KW - Interface state

KW - Nitrided oxide

KW - Nitrogen ion implantation

KW - Oxide reliability

KW - Silicon

KW - Stacked oxide

UR - http://www.scopus.com/inward/record.url?scp=0030079547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030079547&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030079547

VL - 35

SP - 1454

EP - 1459

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 SUPPL. B

ER -