Clarification of nitridation effect on oxide formation methods

Takashi Kuroi, Masayoshi Shirahata, Yoshinori Okumura, Satoshi Shimizu, Akinobu Teramoto, Masatoshi Anma, Masahide Inuishi, Hirokazu Miyoshi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxide films formed in a pyrogenic steam ambient, those in a dry oxygen ambient, chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improved by nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.

Original languageEnglish
Pages (from-to)1454-1459
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb 1

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Keywords

  • CMOS
  • CVD
  • Electron trap
  • Hot carrier
  • Interface state
  • Nitrided oxide
  • Nitrogen ion implantation
  • Oxide reliability
  • Silicon
  • Stacked oxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kuroi, T., Shirahata, M., Okumura, Y., Shimizu, S., Teramoto, A., Anma, M., Inuishi, M., & Miyoshi, H. (1996). Clarification of nitridation effect on oxide formation methods. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(2 SUPPL. B), 1454-1459.