Classification of the pore structure of n-type silicon and its microstructure

Tetsuya Osaka, Kako Ogasawara, Shohei Nakahara

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Porous silicon samples were grown under various anodization conditions on {100} oriented n-silicon substrates. Scanning and transmission electron microscope observations have shown that the microstructure of porous silicon primarily falls into three categories, which can be classified as single layer, double layer, and large macropore types. These three types differ not only in their microstructural details, but also in luminescence properties. In all three types of samples, the inner surface of pores created by anodization is coated with a low density amorphous material, which contained silicon and oxygen. In addition, all the pore surfaces were roughened by anodization, leaving nanoscale crystalline silicon asperities.

Original languageEnglish
Pages (from-to)3226-3237
Number of pages12
JournalJournal of the Electrochemical Society
Volume144
Issue number9
DOIs
Publication statusPublished - 1997 Sep

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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